Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing

Tournié, E.; Pinault, M.‐A.; Guzmán, Á.

doi:10.1063/1.1481978

Cited by 90 publications

(63 citation statements)

References 21 publications

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“…From a local-strain point of view, it is more favorable for N to bind to In rather than Ga; however, from thermodynamics, the cohesive energy of GaN is higher than that of InN. As a result, Tournie et al 19 explain that the dominant parameter during growth is the cohesive energy, which causes the N atoms to propagate more toward Ga than In. This most likely forms a Ga-rich environment that comprises of N dimmers, i.e., two N atoms on a single As site [(NN) As ].…”

Section: Section Iii: Quantum Wells With 32% In and Barriers With 1% mentioning

confidence: 95%

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

Govindaraju

Reifsnider

Oye

et al. 2004

Journal of Elec Materi

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This article describes the effects of rapid thermal annealing (RTA) on the photoluminescence (PL) emission from a series of GaIn(N)As quantum wells. Indium compositions of both 20% and 32% were examined with nominal N compositions of 1% or 2%. The N location was varied within our quantum structure, which can be divided into three regions: (1) quantum well, (2) Ga(N)As spacer layers at the barrier-to-well interface and well-to-barrier interface, and (3) barriers surrounding each quantum well. Eight combinations of samples were examined with varying In content, Ga(N)As spacer layer thickness, N content, and N location in the structure. In the best cases, the presence of these Ga(N)As spacer layers improves the PL properties, due to annealing, with a reduction in the emission wavelength blueshift by ϳ400 Å, a reduction of the decrease in the full-width at half-maximum (FWHM) by ϳ5 meV, and a threefold reduction of the increase in integrated intensity. It was also observed that relocating N from the quantum wells to the barriers produces a comparable emission wavelength both before and after annealing. Our results further show that the composition of incorporated N in the material is most influential during the stages of RTA in which relatively small amounts of thermal energy is present from our lower annealing times and temperatures. Hence, we believe a low thermal-energy anneal is responsible for the recovery of the plasma-related crystal damage that was incurred during its growth. However, the In composition in the quantum well is most influential during the latter stages of thermal annealing, at increased times and temperatures, where the wavelength blueshift was roughly independent of the amount of incorporated N. As a result, our investigations into the effects of RTA on the PL properties support other reports that suggest the wavelength blueshift is not due to N diffusion.

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Section: Section Iii: Quantum Wells With 32% In and Barriers With 1% mentioning

confidence: 95%

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

Govindaraju

Reifsnider

Oye

et al. 2004

Journal of Elec Materi

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“…Unfortunately this band gap reduction is accompanied by a reduction of the radiative efficiency. This degradation of optical properties most probably results from the defects introduced by N incorporation, as indicated by X-ray diffraction experiments [4]. This effect strongly depends on both growth condition and thermal annealing.…”

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confidence: 98%

Longitudinal‐optical phonon broadening due to nitrogen atom incorporation in InGaAsN/GaAs quantum wells

Intartaglia¹,

Taliercio²,

Valvin³

et al. 2005

phys. stat. sol. (c)

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We present a study of the optical properties of double quantum wells of In 0.3 Ga 0.7 As 1-x N x /GaAs. The nitrogen composition, x, lies between 2 10 -3 and 9.5 10 -3 . Temperature dependence of time integrated photoluminescence (PL) and time-resolved PL have been investigated. The temperature dependences of the PL energy and the linewidth are correlated, and they show that the carriers are localised at low temperature. Consistently the energy dependence of decay time across the PL line is analysed in terms of mobility edge. The carrier localisation at low temperature is due to alloy disorder in the wells which induces potential fluctuations. The PL linewidth increases with temperature. This linewidth is also strongly increased by the increase of the N composition. We attribute this behaviour to an enhanced coupling of the carriers with LO phonons. We deduce from these results that N incorporation increases the polar character of the III-V compound. 1 Introduction The physics of III-(V,N) alloys is currently living a tremendous activity due to the dramatic red-shift that the band gap of these alloys experiences when the amount of nitrogen incorporated in the crystal increases. This paves the way to potential applications in the domain of longwavelength lasers [1] and high-performance solar cells [2]. The great interest of (Ga,In)(N,As) alloys is the possibility to realise quantum structures emitting light close to 1.55 µm, and, lattice matched on GaAs substrates. This lattice matched is crucial to reduce the density of non radiative defects, and to increase the quantum efficiency of these systems. Lasers operation at 1.55 µm has been obtained [3] using such quaternary alloys. However, the physical properties of these systems are still poorly known and a lot of points need to be clarified such as recombination dynamics, localisation effects and carrier coupling to longitudinal-optical (LO) phonons.In this work, we have investigated the temperature dependence of the optical properties of In 0.3 Ga 0.7 As 1-x N x /GaAs QWs. These experiments show that the low temperature radiative recombination is dominated by localised carriers. Above some critical temperature (varying from sample to sample) carriers are delocalised and we show that increasing the N composition strengthens the coupling between carriers and LO phonons.

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“…The inserting of straingraded buffer layer is another alternative. Inserting strain compensating buffer layers into the InGaNAs/GaAs quantum well (QW) structure can provide strain relaxation, reduce the threading dislocation density and extend the emission wavelength [9,10]. However, the effect of inserting strain relief GaNAs layers on the electrooptical properties of InGaNAs/GaAs QW is not well understood yet and requires further experimental studies.…”

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confidence: 99%

Electro‐modulation enhancement in the InGaNAs/GaAs quantum well structures

Lee¹,

Lu²,

Liu³

et al. 2008

Phys. Status Solidi (c)

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Electrooptical properties of InGaNAs/GaAs quantum well structures were investigated by photoreflectance spectroscopy. The MBE grown structures consist of a central InGaNAs well, GaAs barriers, and GaAsN strain compensating buffer layers of different thickness. More quantum states and extended wave functions in the system with strain relief GaAsN barriers due to broader and lower confinement profile. Particular electro‐modulated spectral features corresponding to excitonic interband transitions are enhanced. Compared with the numerically calculated quantum state energies and wave functions, the electromodulation enhanced transitions were those involving quantum states with wave functions distribute in wider regions and extend more from the InGaNAs well into the space charge region near interfaces. It was the internal electric field near the heterointerfaces strongly enhanced the electro‐modulation efficiency. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing

Cited by 90 publications

References 21 publications

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

Longitudinal‐optical phonon broadening due to nitrogen atom incorporation in InGaAsN/GaAs quantum wells

Electro‐modulation enhancement in the InGaNAs/GaAs quantum well structures

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