Abstract:Electrooptical properties of InGaNAs/GaAs quantum well structures were investigated by photoreflectance spectroscopy. The MBE grown structures consist of a central InGaNAs well, GaAs barriers, and GaAsN strain compensating buffer layers of different thickness. More quantum states and extended wave functions in the system with strain relief GaAsN barriers due to broader and lower confinement profile. Particular electro‐modulated spectral features corresponding to excitonic interband transitions are enhanced. Co… Show more
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