Fabrication of GaAs metal-oxide-semiconductor capacitors (MOSCAPs) with an unpinned interface is reported. The MOSCAP structure consists of a few monolayers of germanium grown in a molecular beam epitaxy (MBE) system in order to terminate an MBE-grown silicon-doped (100) GaAs layer. An ex situ HfO2 high-κ dielectric with an equivalent oxide thickness of 12Å was deposited by using a dc magnetron sputtering system. A midgap interface state density (Dit) of 5×1011eV−1cm−2 was measured using the high-frequency conductance technique. A rapid thermal annealing study was performed in order to examine the integrity of the gate stack at different temperatures. In addition, a forming gas anneal at 400°C appears to significantly reduce the midgap Dit revealed by probing the frequency dispersion behavior of the MOSCAPs.
The use of the Schiff-base ligand N,N'-bis(5-bromo-3-methoxysalicylidene)propylene-1,3-diamine (H2L) and 1,4-benzenedicarboxylate (BDC) enables the construction of the hexanuclear luminescent Zn-Nd complex [Zn4Nd2L4(1,4-BDC)2].[Nd(NO3)5(H2O)].Et2O.2EtOH.3H2O.
Vertical growth of ZnO nanowires is usually achieved on lattice-matched substrates such as ZnO or sapphire using various vapor transport techniques. Accomplishing this on silicon substrates requires thick ZnO buffer layers. Here we demonstrate growth of vertical ZnO nanowires on FeCrAl substrates. The pre-annealing prior to growth appears to preferentially segregate Al and O to the surface, thus leading to a self-forming, thin pseudo-buffer layer, which then results in vertical nanowire growth as on sapphire substrates. Metal substrates are more suitable and cheaper than others for applications in piezoelectric devices, and thin self-forming layers can also reduce interfacial resistance to electrical and thermal conduction.
Multinuclear 3d-4f complexes with sandwichlike molecular structures are formed with the Schiff-base ligand bis(3-methoxysalicylidene)ethylene-1,2-phenylenediamine(H(2)L). The stoichiometry and structures are dependent on the Zn:Nd ratio and counteranions present. They are trinuclear [Nd(ZnL)2(NO3)2(H2O)2].NO3.EtOH.H2O (1), [Nd(ZnL)2Cl2(H2O)3].Cl.2MeOH.5H2O (2), and tetranuclear [Nd2(ZnL)2Cl6(MeOH)2].MeOH (3). Dinuclear complex [NdZnL(NO3)3MeCN].MeCN (4) was also characterized. Near-infrared (NIR) lanthanide luminescence is observed in these complexes.
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