The opening of an electrical band gap in graphene is crucial for its application for logic circuits. Recent studies have shown that an energy gap in Bernal-stacked bilayer graphene can be generated by applying an electric displacement field. Molecular doping has also been proposed to open the electrical gap of bilayer graphene by breaking either in-plane symmetry or inversion symmetry; however, no direct observation of an electrical gap has been reported. Here we discover that the organic molecule triazine is able to form a uniform thin coating on the top surface of a bilayer graphene, which efficiently blocks the accessible doping sites and prevents ambient p-doping on the top layer. The charge distribution asymmetry between the top and bottom layers can then be enhanced simply by increasing the p-doping from oxygen/moisture to the bottom layer. The on/off current ratio for a bottom-gated bilayer transistor operated in ambient condition is improved by at least 1 order of magnitude. The estimated electrical band gap is up to ∼111 meV at room temperature. The observed electrical band gap dependence on the hole-carrier density increase agrees well with the recent density-functional theory calculations. This research provides a simple method to obtain a graphene bilayer transistor with a moderate on/off current ratio, which can be stably operated in air without the need to use an additional top gate.

High-performance bioceramics are required for preventing failure and prolonging the life-time of bone grafting scaffolds and osseous implants. The proper identification and development of materials with extended functionalities addressing socio-economic needs and health problems constitute important and critical steps at the heart of clinical research. Recent findings in the realm of ion-substituted hydroxyapatite (HA) could pave the road towards significant developments in biomedicine, with an emphasis on a new generation of orthopaedic and dentistry applications, since such bioceramics are able to mimic the structural, compositional and mechanical properties of the bone mineral phase. In fact, the fascinating ability of the HA crystalline lattice to allow for the substitution of calcium ions with a plethora of cationic species has been widely explored in the recent period, with consequent modifications of its physical and chemical features, as well as its functional mechanical and in vitro and in vivo biological performance. A comprehensive inventory of the progresses achieved so far is both opportune and of paramount importance, in order to not only gather and summarize information, but to also allow fellow researchers to compare with ease and filter the best solutions for the cation substitution of HA-based materials and enable the development of multi-functional biomedical designs. The review surveys preparation and synthesis methods, pinpoints all the explored cation dopants, and discloses the full application range of substituted HA. Special attention is dedicated to the antimicrobial efficiency spectrum and cytotoxic trade-off concentration values for various cell lines, highlighting new prophylactic routes for the prevention of implant failure. Importantly, the current in vitro biological tests (widely employed to unveil the biological performance of HA-based materials), and their ability to mimic the in vivo biological interactions, are also critically assessed. Future perspectives are discussed, and a series of recommendations are underlined.

We extend to longitudinal-optical (LO) phonons the percolation model set for the basic understanding of the atypical transverse-optical (TO) one-bond→ two-mode behavior observed by Raman scattering in the Be-Se spectral range of the random Zn 1−x Be x Se alloy ͑0 ഛ x ഛ 1͒, which opens the class of mixed crystals with contrast in the bond stiffness. The study is supported by contour modeling of the TO and LO Raman line shapes. This is achieved via application of the Hon and Faust treatment to a version of the modified-randomelement-isodisplacement model generalized to multioscillators. While the TO signal clearly discriminates between Be-Se vibrations within the hard Be-rich region and the soft Zn-rich one, complexity arises in the LO symmetry due to vibration coupling via the 1ong-range longitudinal polarization field. In particular this generates a massive transfer of oscillator strength from the low-frequency ͑LO − ͒ (hard, soft)-mixed mode to the high-frequency ͑LO + ͒ one, which results in an apparent LO + single-mode behavior. Moreover the contrasts between the Zn-Se and Be-Se bond lengths and bond stiffness are proposed to force a Verleur and Barker-like (VB) discrete multimode Raman response from each region. Accordingly LO − and LO + intramode transfers of oscillator strength superimpose to the LO − → LO + intermode one. This accounts for the spectacular distortions of the LO + line shape. On the whole, the puzzling LO behavior can be regarded as the result of a cooperative phenomenon between two discrete assemblies of polar LO phonons, driven by the long-range longitudinal polarization field. Also, the Verleur and Barker description accounts for subtle unexplained behaviors in the TO symmetry. More generally it appears to provide a much attractive area for the discussion of the asymmetries of the TO and LO Raman line shapes in random alloys, as a possible alternative to the much debated spatial correlation model or to internal/external strain effects.

Graphene is a remarkable two-dimensional (2D) material that is of great interest to both academia and industry. It has outstanding electrical and thermal conductivity and good mechanical behavior with promising applications in electronic devices, supercapacitors, batteries, composite materials, flexible transparent displays, solar cells, and sensors. Several methods have been used to produce either pristine graphene or doped graphene. These include chemical vapor deposition (CVD), mechanical exfoliation, decomposition of SiC, liquid-phase exfoliation, pulsed laser deposition (PLD). Among these methods, PLD, which is routinely used for growing complex oxide thin films has proved to be an alternative to the more widely reported CVD method for producing graphene thin films, because of its advantages. Here we review the synthesis of graphene using PLD. We describe recent progress in preparing pristine graphene and doped graphene by PLD, including deposition processes and characterization. The goal of this complete survey is to describe the advantages of using the technique for graphene growth. The review will also help researchers to better understand graphene synthesis using the PLD technique.

Improving graphene-based electrode fabrication processes and developing robust methods for its functionalization are two key research routes to develop new high-performance electrodes for electrochemical applications. Here, a self-organized three-dimensional (3D) graphene electrode processed by pulsed laser deposition with thermal annealing is reported. This substrate shows great performance in electron transfer kinetics regarding ferrocene redox probes in solution. A robust electrografting strategy for covalently attaching a redox probe onto these graphene electrodes is also reported. The modification protocol consists of a combination of diazonium salt electrografting and click chemistry. An alkyne-terminated phenyl ring is first electrografted onto the self-organized 3D graphene electrode by in situ electrochemical reduction of 4-ethynylphenyl diazonium. Then the ethynylphenyl-modified surface efficiently reacts with the redox probe bearing a terminal azide moiety (2-azidoethyl ferrocene) by means of Cu(I)-catalyzed alkyne-azide cycloaddition. Our modification strategy applied to 3D graphene electrodes was analyzed by means of atomic force microscopy, scanning electron microscopy, Raman spectroscopy, cyclic voltammetry, and X-ray photoelectron spectroscopy (XPS). For XPS chemical surface analysis, special attention was paid to the distribution and chemical state of iron and nitrogen in order to highlight the functionalization of the graphene-based substrate by electrochemically grafting a ferrocene derivative. Dense grafting was observed, offering 4.9 × 10(-10) mol cm(-2) surface coverage and showing a stable signal over 22 days. The electrografting was performed in the form of multilayers, which offers higher ferrocene loading than a dense monolayer on a flat surface. This work opens highly promising perspectives for the development of self-organized 3D graphene electrodes with various sensing functionalities.

New synthesis routes to tailor graphene properties by controlling the concentration and chemical configuration of dopants show great promise. Herein we report the direct reproducible synthesis of 2-3% nitrogen-doped ‘few-layer’ graphene from a solid state nitrogen carbide a-C:N source synthesized by femtosecond pulsed laser ablation. Analytical investigations, including synchrotron facilities, made it possible to identify the configuration and chemistry of the nitrogen-doped graphene films. Auger mapping successfully quantified the 2D distribution of the number of graphene layers over the surface, and hence offers a new original way to probe the architecture of graphene sheets. The films mainly consist in a Bernal ABA stacking three-layer architecture, with a layer number distribution ranging from 2 to 6. Nitrogen doping affects the charge carrier distribution but has no significant effects on the number of lattice defects or disorders, compared to undoped graphene synthetized in similar conditions. Pyridinic, quaternary and pyrrolic nitrogen are the dominant chemical configurations, pyridinic N being preponderant at the scale of the film architecture. This work opens highly promising perspectives for the development of self-organized nitrogen-doped graphene materials, as synthetized from solid carbon nitride, with various functionalities, and for the characterization of 2D materials using a significant new methodology.

We propose a simplified version of the one-bond two-mode percolation model originally developed for the long wave phonons related to the stiff Be–VI bond in (Zn, Be) chalcogenides, which open the class of random mixed crystals with contrast in the bond stiffness. This is deduced from the comparison between the Raman responses from the stiff Be–VI bond and the soft Zn–VI one in these systems. The simplified version is tested on (Ga, In)As, made of soft-like bonds only and taken here as a representative challenging system. This results in a successful reinterpretation of the puzzling multi-phonon behaviour in the Raman/infrared spectra of this alloy, that has been a subject of debate. The discussion is supported by contour modelling of the TO and LO Raman lineshapes by applying the Hon and Faust treatment to a version of the modified-random-element-isodisplacement model generalized to multi-oscillators. Also, the assignment of the long wave phonons in (Ga, In)As is supported by atomistic calculations of the bond length distributions of the minority bond species in large (Ga, In)As supercells corresponding to alloy compositions close to the In–As (In ∼0.19) and Ga–As (In ∼0.81) bond percolation thresholds. The configurations are analysed to distinguish between isolated and connected bonds, not in the usual terms of next nearest neighbours.

Zone-center longitudinal (LO) and transverse (TO) optical phonons of Zn1−xBexTe epilayers are identified by Raman spectroscopy. On top of the expected BeTe- and ZnTe-like modes, which obey the modified-random-element-isodisplacement model, we observe an extra BeTe-like (TO, LO) doublet at intermediate x values. It has the same atypical characteristics as its BeSe-like counterpart in ZnBeSe alloy. Its activation validates our percolative picture for multimode description in Be–chalcogenide alloys that open the attractive class of mixed crystals with a sharp contrast in the bond stiffness. Also, the local modes of Be in ZnTe and of Zn in BeTe are identified at 411 cm−1 and 195 cm−1, respectively.