2005
DOI: 10.1088/0953-8984/18/2/016
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Percolation picture for long wave phonons in zinc-blende mixed crystals: from (Zn, Be) chalcogenides to (Ga, In)As

Abstract: We propose a simplified version of the one-bond two-mode percolation model originally developed for the long wave phonons related to the stiff Be–VI bond in (Zn, Be) chalcogenides, which open the class of random mixed crystals with contrast in the bond stiffness. This is deduced from the comparison between the Raman responses from the stiff Be–VI bond and the soft Zn–VI one in these systems. The simplified version is tested on (Ga, In)As, made of soft-like bonds only and taken here as a representative challen… Show more

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Cited by 24 publications
(35 citation statements)
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“…8 lacking so far, probably due to the fact that the traditional 1-bond→ 1-mode description of the phonon mode behavior in random InGaAs, which makes a natural reference here, has been itself a much debated subject. 14 In this work, we report a combined Raman study of In 0.08 Ga 0.92 As 0.98 N 0.02 layers within both N-and InGaAsrelated spectral ranges. The N-related phonons are assigned from ab initio calculations of the zone-center phonon density of states ͑ZC-DOS͒ of GaAs-based supercells with ͑In, N͒ motifs among the most likely to occur in real crystals.…”
Section: Combined Raman Study Of Ingaasn From the N-impurity And Ingamentioning
confidence: 99%
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“…8 lacking so far, probably due to the fact that the traditional 1-bond→ 1-mode description of the phonon mode behavior in random InGaAs, which makes a natural reference here, has been itself a much debated subject. 14 In this work, we report a combined Raman study of In 0.08 Ga 0.92 As 0.98 N 0.02 layers within both N-and InGaAsrelated spectral ranges. The N-related phonons are assigned from ab initio calculations of the zone-center phonon density of states ͑ZC-DOS͒ of GaAs-based supercells with ͑In, N͒ motifs among the most likely to occur in real crystals.…”
Section: Combined Raman Study Of Ingaasn From the N-impurity And Ingamentioning
confidence: 99%
“…An unexplored issue of whether the N-free In atoms distribute randomly or not in GaAs is addressed by comparing the transverse and longitudinal optical ͑TO,LO͒ Raman signals to reference line shapes calculated via our phenomenological 1-bond→ 2-phonon "percolation" model recently proposed for random InGaAs. 14 Raman measurements are performed on two ͑001͒ InGaAsN / GaAs pseudomorphic layers grown by MBE, 15 of similar composition, i.e., ͑ϳ2% N, ϳ8% In͒, as determined by x-ray diffraction. For an insight into the N-related phonon modes we use a thin ͑100 nm͒ perfectly strained layer.…”
Section: Combined Raman Study Of Ingaasn From the N-impurity And Ingamentioning
confidence: 99%
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“…For alloy crystals with the modified two mode rearrange ment of the vibrational spectrum, the MREI model is invalid. To analyze the rearrangement of the vibra tional spectrum of the alloy with the above indicated composition, Pagés et al [7] proposed a fundamen tally new concept based on the percolation site theory [8]. In the percolation (1 bond 2 mode) scheme proposed for the vibrational spectrum, the A 1 -x B x C alloy crystal is considered as a composite medium formed of two coexisting AC and BC like regions that appear as a result of natural local fluctuations in the alloy composition.…”
Section: Introductionmentioning
confidence: 99%
“…In a recent work, we applied this approach successfully to the In 1-x Ga x As [6] and In 1-x Ga x P [7] random alloys. The purpose of this paper is to investigate whether the percolation model is also able to account for the TO behavior of the ZnTeSe alloy -on a quantitative basis, which the traditional MREI approach fails to do (refer above).…”
mentioning
confidence: 99%