2016
DOI: 10.1021/acsami.5b10647
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Robust Electrografting on Self-Organized 3D Graphene Electrodes

Abstract: Improving graphene-based electrode fabrication processes and developing robust methods for its functionalization are two key research routes to develop new high-performance electrodes for electrochemical applications. Here, a self-organized three-dimensional (3D) graphene electrode processed by pulsed laser deposition with thermal annealing is reported. This substrate shows great performance in electron transfer kinetics regarding ferrocene redox probes in solution. A robust electrografting strategy for covale… Show more

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Cited by 51 publications
(44 citation statements)
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“…Measurement of the half‐wave potential ( E 1/2 =+0.70 V) and formal potential (Ef0 =+0.35 V) from Figure yields the value for η 1/2 to be 0.35 V. Substitution of all known parameters gave k 0 =3±1 s −1 , which is consistent with prior literature estimations that range from 0.35 to 44 s −1 , either for direct charge transfer from ferrocene derivatives to carbon electrodes or indirect charge transfer through multiwalled carbon nano‐ tubes . The value for k 0 was determined by assuming the absence of contact resistance between the particles and the electrode; hence, possible interference from contact resistance cannot be completely ruled out during nanoimpacts, and the value of 3±1 s −1 should be considered to be a lower limit for k 0 .…”
Section: Resultssupporting
confidence: 82%
“…Measurement of the half‐wave potential ( E 1/2 =+0.70 V) and formal potential (Ef0 =+0.35 V) from Figure yields the value for η 1/2 to be 0.35 V. Substitution of all known parameters gave k 0 =3±1 s −1 , which is consistent with prior literature estimations that range from 0.35 to 44 s −1 , either for direct charge transfer from ferrocene derivatives to carbon electrodes or indirect charge transfer through multiwalled carbon nano‐ tubes . The value for k 0 was determined by assuming the absence of contact resistance between the particles and the electrode; hence, possible interference from contact resistance cannot be completely ruled out during nanoimpacts, and the value of 3±1 s −1 should be considered to be a lower limit for k 0 .…”
Section: Resultssupporting
confidence: 82%
“…These films, however, were not used as electrodes. On the other hand, a N-doped graphene (NG) electrode prepared by PLD coupled with in-situ thermal annealing (PLD-TA) was achieved by Fortgang et al [338]. More recently, Bourquard et al used the PLD-TA process to form an N-doped graphene film by high temperature condensation of the laser-induced carbon plasma plume onto the Si electrode previously covered by an Ni catalytic film [339], using a protocol published by the same group [340] Carbon was ablated at 780 • C from the graphite target using a femtosecond laser (λ = 800 nm, pulse width of 60 ns, repetition rate of 1 kHz, and Φ = 5 J·cm −2 ) at a distance of 36 mm from the graphite target, with P N = 10 Pa in the vacuum chamber.…”
Section: Graphenementioning
confidence: 99%
“…A similar method was applied to grow multi-layer, textured graphene films on n-doped Si substrate. 75 For the first step, an amorphous carbon film was deposited on a Ni layer buffered Si substrate using PLD. Subsequently, the graphene was converted from the carbon film using a post-annealing process.…”
Section: Graphene Grown On a Metal Substratementioning
confidence: 99%