Articles you may be interested in A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination Appl. Phys. Lett. 102, 213903 (2013); 10.1063/1.4807506 Meyer-Neldel rule and the influence of entropy on capture cross-section determination in The Meyer-Neldel behavior reported for the emission probabilities of electrons and holes was included in our code, replacing the gap state capture cross sections of the Shockley-Read-Hall formalisms with capture cross sections containing an exponential function of the trap energy depth. The Meyer-Neldel energies for electrons and holes are the slopes of these exponentials. Our results indicate that emission probabilities of neutral states no deeper than approximately 0.45 eV and 0.37 eV from the conduction and valence band edges, respectively, can show a Meyer-Neldel behavior only, while on the other hand, its implementation in deeper gap states makes the replica-tion of experimental J-V curves of p-in solar cells and detectors impossible. The Meyer-Neldel behavior can be included in all neutral capture cross sections of acceptor-like tail states without affecting the J-V characteristics, while it cannot be included in all capture cross sections of neutral donor-like tail states and/or defect states without predicting device performances below the experimental figures, that become even lower when it is also included in charged capture cross sections. The implementation of the anti Meyer-Neldel behavior at tail states gives rise to slightly better and reasonable device performances. V C 2015 AIP Publishing LLC.
Direct recombination enhanced annealing of the radiation-induced defect H2 in p InGaP has been observed by deep level transient spectroscopy (DLTS). Detailed analysis of the annealing data at zero and reverse bias shows that annealing rates are independent of the defect charge state or this defect interacts with the two bands, i.e., is a recombination center trapping alternatively an electron, then a hole. An experiment based on minority carrier capture on a majority trap by the double carrier pulse DLTS technique further supports the evidence that H2 has a large minority carrier capture cross section and is an efficient nonradiative recombination center. Recombination-enhanced defect annealing rates obeys a simple Arrhenius law with an activation enthalpy of 0.51±0.09 eV, in contrast to athermal processes observed in GaP. Detailed analysis of results reveals that the mechanism involved in the minority carrier injection annealing of the H2 defect is energy release mechanism in which enhancement is induced by the energy which is released when a minority carrier is trapped on the defect site. Finally, analysis of the depth profiles data relates that H2 acts as a donor, which partially compensates the acceptors.
We have carried out an investigation of n+–p–p+ silicon diodes after irradiation with 1 MeV electrons and 10 MeV protons and subsequently after annealing. The effects upon the material and device parameters of samples irradiated with different particles are compared by expressing the particle fluence in terms of an effective absorbed dose of 1 MeV electrons. Although the spectrum of defects (observed by deep-level transient spectroscopy) introduced by 1 MeV electrons and 10 MeV protons was slightly different, the total defect introduction rate per effective 1 MeV electron dose was similar, as was the effect upon the device parameters. After irradiation with high fluences of electrons or protons, the effective carrier concentration in the base of the diodes was reduced dramatically, an effect referred to as “carrier removal.” The effects of carrier removal upon the device parameters, in particular, the series resistance and saturation current, are discussed in detail. In addition, the relative importance of different radiation-induced defects is compared.
This letter reports the growth of high-efficiency Al0.3Ga0.7As solar cells by molecular beam epitaxy. As the growth temperature increases from 650 to 750 °C, the concentration of midgap electron traps in the active layers decreases from 4×1015 to less than 3×1013 cm−3 and the hole diffusion length in the layers improves from 2.0 to 2.6 μm. For cells grown at 750 °C, an efficiency of 14.6% (AM1.5, 100 mW/cm2 for an active area) is obtained.
The effect of oxygen, which is unintentionally incorporated into AlGaAs films during epitaxial growth, on AlGaAs solar cell characteristics is investigated using molecular-beam epitaxy. It is found that oxygen concentration strongly influences minority-carrier diffusion length and that solar cell efficiency greatly decreases as oxygen concentration increases. A model to describe the effect of oxygen on solar cell characteristics is suggested.
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