Single event effects in an analog SOI transconductor: a case study

Viale, Carlos; Petrashin, Pablo; Toledo, Luis; Lancioni, Wálter; Vázquez, Carlos Daniel

doi:10.1109/latw.2015.7102408

Cited by 3 publications

(2 citation statements)

References 9 publications

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“…The latter means that, if a given CUT presents a frequency and/or amplitude deviation of less than 5% from the nominal values (no fault injected), the circuit is passed as fault-free. This margin has previously shown to account adequately for process variation [8,11,[14][15][16] without passing faulty circuits.…”

Section: ) Catastrophic Fault Injection Campaignmentioning

confidence: 99%

Embedded Radiation sensor with OBIST structure for applications in mixed signal systems

Petrashin

Lancioni

Laprovitta

et al. 2021

JAREE

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Oscillation based testing (OBT) has proven to be a simple and effective test strategy for numerous kind of circuits. In this work, OBT is applied to a radiation sensor to be used as a VLSI cell in embedded applications, implementing an oscillation built-in self-test (OBIST) structure. The oscillation condition is achieved by means of a minimally intrusive switched feedback loop and the response evaluation circuit can be included in a very simple way, minimizing the hardware overhead. The fault simulation indicates a fault coverage of 100% for the circuit under test.Keywords: fault simulation, mixed signal testing, OBIST, oscillation-based test, VLSI testing.

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Section: ) Catastrophic Fault Injection Campaignmentioning

confidence: 99%

Embedded Radiation sensor with OBIST structure for applications in mixed signal systems

Petrashin

Lancioni

Laprovitta

et al. 2021

JAREE

Self Cite

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“…In these circuits, some short-term single-event effects, called Single Event Effects, or SEEs, occur, which are present for a short time interval, causing momentary changes in device properties. However, there are other effects that can become permanent [16], [17]. The latter, called long-term effects, constitute the operating principle of this proposal.…”

Section: Introductionmentioning

confidence: 99%

Temperature compensated low voltage MOSFET radiation sensor: proof of concept and a case study

Petrashin

Lancioni

Toledo

et al. 2020

JAREE

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This paper presents a proof of concept performed on a new and very simple CMOS circuit configuration that implements a radiation dosimeter based on the threshold voltage difference (VTH) principle. The circuit used does not use resistors and all the transistors work in strong inversion, their mobility factor being completely canceled by the proposed architecture. Its operation exploits the relationship between radiation and VTH shifting, which allows, through a circuit configuration, to compensate for temperature variation and amplify the reaction to radiation, making it ideal for integrated industrial applications due to its simplicity and good operation. The circuit was designed for operation in areas naturally at risk of radiation, for example nuclear power plants or radiological clinics. Its advantage over other circuits that perform similar functions is mainly its low cost and simplicity of design.

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Automatic ASET sensitivity evaluation of a custom-designed 180nm CMOS technology operational amplifier

Fontana

Pazos

Aguirre

et al. 2017

2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)

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Single event effects in an analog SOI transconductor: a case study

Cited by 3 publications

References 9 publications

Embedded Radiation sensor with OBIST structure for applications in mixed signal systems

Embedded Radiation sensor with OBIST structure for applications in mixed signal systems

Temperature compensated low voltage MOSFET radiation sensor: proof of concept and a case study

Automatic ASET sensitivity evaluation of a custom-designed 180nm CMOS technology operational amplifier

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