Embedded Radiation sensor with OBIST structure for applications in mixed signal systems

Petrashin, Pablo; Lancioni, Wálter; Laprovitta, Agustín Miguel; Castagnola, Juan Luis

doi:10.12962/jaree.v5i2.194

Cited by 2 publications

(2 citation statements)

References 16 publications

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“…The circuit's design capitalizes on the inherent behavioral differences between the two transistor types, leveraging their individual responses to temperature and radiation conditions. This strategic implementation allows for the potential compensation of radiation-induced effects on both branches and enhance the temperature-induced effects, thereby enabling accurate and reliable measurements in challenging radiation-rich environments [11][12][13][14][15][16].…”

Section: A First Approachmentioning

confidence: 99%

Reliable Temperature Measurement in Radiation-Intensive Environments

Petrashin,

Lancioni,

Laprovitta

et al. 2024

JAREE

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Radiation-resistant temperature sensors are vital for ensuring reliability in radiation-intensive environments, where the highly energetic and penetrating nature of radiation can significantly impact electronic devices and sensors. In such environments, like those near intense radiation sources or in challenging radiation-rich settings, such as space, gamma radiation can lead to erroneous measurements or equipment failures. Radiation-resistant sensors play a crucial role in maintaining measurement accuracy as they are designed to minimize interference caused by radiation, protecting electronic components and providing precise and reliable temperature readings. Their resilience to radiation-induced effects ensures data durability, reducing the need for frequent replacements, and enhancing the overall reliability of measurements in these demanding conditions. In this paper, we present and analyze two different configurations, aiming to address the challenges posed by radiation in sensitive environments. By exploring these novel approaches, we seek to enhance the robustness and accuracy of temperature sensors in radiation-intensive settings, enabling reliable data collection and facilitating successful operations in challenging radiation-rich conditions. The comparative analysis of these configurations will shed light on their performance and effectiveness in mitigating radiation-induced effects, thereby contributing to the advancement of radiation-resistant temperature sensing technologies.

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Section: A First Approachmentioning

confidence: 99%

Reliable Temperature Measurement in Radiation-Intensive Environments

Petrashin,

Lancioni,

Laprovitta

et al. 2024

JAREE

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“…Radiofrequency (RF) oscillators can transform changes in resistance or capacitance into readable frequency signals [ 25 ]. LC-tank oscillators [ 26 ], crystal oscillators [ 27 ], and ring oscillators [ 28 , 29 , 30 ] are the most commonly used oscillators for sensors’ backend circuits. LC-tank oscillators are widely used for high-frequency-range devices.…”

Section: Introductionmentioning

confidence: 99%

Monolayer Graphene Radiation Sensor with Backend RF Ring Oscillator Transducer

2022

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This paper proposes a new graphene gamma- and beta-radiation sensor with a backend RF ring oscillator transducer employed to convert the change in the graphene resistivity due to ionizing irradiation into a frequency output. The sensor consists of a CVD monolayer of graphene grown on a copper substrate, with an RF ring oscillator readout circuit in which the percentage change in frequency is captured versus the change in radiation dose. The novel integration of the RF oscillator transducer with the graphene monolayer results in high average sensitivity to gamma irradiation up to 3.82 kΩ/kGy, which corresponds to a percentage change in frequency of 7.86% kGy−1 in response to cumulative gamma irradiation ranging from 0 to 1 kGy. The new approach helps to minimize background environmental effects (e.g., due to light and temperature), leading to an insignificant error in the output change in frequency of the order of 0.46% when operated in light versus dark conditions. The uncertainty in readings due to background light was analyzed, and the error in the resistance was found to be of the order of 1.34 Ω, which confirms the high stability and selectivity of the proposed sensor under different background effects. Furthermore, the evolution of the graphene’s lattice defect density due to radiation was observed using Raman spectroscopy and SEM, indicating a lattice defect density of up to 1.780 × 1011/cm2 at 1 kGy gamma radiation, confirming the increase in the graphene resistance and proving the graphene’s sensitivity. In contrast, the graphene’s defect density in response to beta radiation was 0.683 × 1011/cm2 at 3 kGy beta radiation, which is significantly lower than the gamma effects. This can be attributed to the lower p-doping effect caused by beta irradiation in ambient conditions, compared with that caused by gamma irradiation. Morphological analysis was used to verify the evolution of the microstructural defects caused by ionizing irradiation. The proposed sensor monitors the low-to-medium cumulative range of ionizing radiations ranging from 0 to 1 kGy for gamma radiation and 0 to 9 kGy for beta radiation, with high resolution and selectivity, filling the research gap in the study of graphene-based radiation sensors at low-to-medium ionizing radiation doses. This range is essential for the pharmaceutical and food industries, as it spans the minimum range for affecting human health, causing cancer and DNA damage.

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Embedded Radiation sensor with OBIST structure for applications in mixed signal systems

Cited by 2 publications

References 16 publications

Reliable Temperature Measurement in Radiation-Intensive Environments

Reliable Temperature Measurement in Radiation-Intensive Environments

Monolayer Graphene Radiation Sensor with Backend RF Ring Oscillator Transducer

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