Automatic ASET sensitivity evaluation of a custom-designed 180nm CMOS technology operational amplifier

Fontana, Andrés; Pazos, Sebastián; Aguirre, Fernando; Palumbo, F.

doi:10.1109/camta.2017.8058136

Cited by 2 publications

(2 citation statements)

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“…Moreover, pulse energy analysis can provide a figure of merit to quantify the radiation sensitivity of the circuit as well as assessing the contribution of each transistor for hardening proposes . Additionally, the figure of merit can be used to perform a comparison between different designs with the same functionality [33], [34] working on a system with fixed bandwith specifications. Hence, the criteria to establish circuit sensitivity is strongly dependent on the system within which the circuit will perform, and should therefore be chosen accordingly.…”

Section: Resultsmentioning

confidence: 99%

“…Furthermore, ion rate is low enough to discard multiple ions reaching the CUT during the time it takes for an ASET to decay below observable values (∼1 ion per 10ms vs. a maximum ASET duration of 3µs). Additionally, ASET injection through current pulse sources in SPICE on each sensitive transistor of the device do not reproduce this output behavior, consistently with the design specifications of the circuit [34]. Current injection was performed using the widely accepted double exponential current pulse model [7], [20], [38], [39], whose expression is included for clarity in equation 1.…”

Section: A Experimental Observation Of Charge Sharingmentioning

confidence: 99%

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Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp

Fontana

Pazos

Aguirre

et al. 2019

IEEE Trans. Nucl. Sci.

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In this work, charge sharing effects on Analog Single Event Transients are experimentally observed in a fully-custom designed, 180nm CMOS Operational Amplifier by means of a heavy-ion microbeam. Sensitive nodes of the differential stage showed bipolar output transients that cannot be explained by single node collection for the closed loop characteristics of the circuit under test. Layout of these transistors are consistent with charge sharing effects due to deposited charge diffusion. Implementation of linear modeling and simulations of multiple node collection between paired transistors of the input stage showed great coincidence with the obtained experimental waveforms, shaped as bipolar, quenched pulses. These effects are also observed due to dummy transistors placed in the layout.A simple parametrization at the simulation level is proposed to reproduce the observed experimental waveforms. Results indicate that charge-sharing effects should be taken into account during simulation-based sensitivity evaluation of analog circuits, as pulse quenching can alter the obtained results, and linear modeling is a simple approach to emulate simultaneous charge collection in multiple nodes by applying superposition principles, with aims of hardening a design.

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Section: Resultsmentioning

confidence: 99%