Simultaneous doping of GaP with Sn and Zn

Abstract

GaP liquid phase epitaxial layers are grown from tin solution with various amounts of Zn added to the melt (x Zn1 = 3 × 10−3 to 2 × 10−1). The Sn and Zn concentrations NSn and NZn in the solid phase are determined by chemical analysis as function of x Zn1 and the relation NSn ≈︁ NZn ≈︁ (x Zn1)1/2 is found. An analysis of the electrical measurements shows that the electrically active acceptor and donor concentrations are NA ≈︁ 0.04NZn and ND ≈︁ 0.007NSn independent of x Zn1 and that NA is nearly equal to the Zn concentration reported for GaP doped with Zn alone. The beginning formation of a mixed crystal of the type (2 GaP)1‐x (ZnSnP2)x is supposed to be responsible for the observed results.