Revealing of lattice defects on (111) faces of gallium phosphide and indium phosphide by chemical etching

Wagner, G.; Gottschalch, V.

doi:10.1002/crat.2170230109

Cited by 5 publications

(2 citation statements)

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“…Wet chemical defect etching is a fast method for routine quality control of substrate material. Mostly the AB-etch (ABRAHAMS, BUIOCCHI) and the HusER-etch (HUBER, LINH) were applied to InP-wafers (WAGNER, GOTTSCHALCH 1988). The revealed etch pits are correlated by shape and magnitude to various defect types.…”

Section: Introductionmentioning

confidence: 99%

“…The revealed etch pits are correlated by shape and magnitude to various defect types. I n the literature (WAGNER, GOTTSCHALCH 1986, 1988 the larger pyramidal etch pits, produced by the Husm-etch, the so called D-pits, were correlated to grown-in dislocations. The smaller and flatter coneor bowl-shaped etch pits (S-pits) were attributed to microdefects, i.e.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

On the correlation of lattice defects to HUBER‐etch pit morphologies on (001) surface of InP

Knauer¹,

Zeimer²,

Sprenger³

1989

Cryst. Res. Technol.

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Various analytical techniques (dcfert etching, optical niicroscopy, X-ray topography (SRT), catliodolmninescence (CL)) were combined to get information about the real structure of 811and 8-doped LEC-InP. The &pits, produced by the HuBER-etch, were n o t only caused by niicrotkfects, as it was described in literature. V'e found a correlation between S p i t s and special types of dislocations.T'crschiedcnc Xnalyseverfahren (Tlefektatien, Rdntgentopographie, Kathodolumines-Lenz inicl Lichtmikroskopie) wurden kornhiniert, uiii AufschlulS uher die Kealstruktur von 811und 8-dotierten LEC-InP zu erhalten. Uurch HUBER-AtzUng ermugte S-Gruben wurden iiicht nur von Mikrodefekten verursacht, wio bisher angenonimen. Es murde eine Zuordnung von S-Gruben LU hesti~iimten Versetzungstypen gefuntlen.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%