1993
DOI: 10.1016/0022-0248(93)90012-l
|View full text |Cite
|
Sign up to set email alerts
|

Microdefects in InP crystals grown by the liquid-encapsulated Czochralski method

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

1
1
0

Year Published

1995
1995
2005
2005

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 8 publications
(2 citation statements)
references
References 12 publications
1
1
0
Order By: Relevance
“…These dislocation densities are considerably lower than what our numerical model predicts when there is no stress relaxation at the solid-liquid interface, but match well the levels predicted in the presence of significant stress relaxation at the interface. Similar conclusions, namely W-shaped dislocation density profiles, have been reached by Volkl and Muller 59 and Hirano et al 80 for the case of growing InP. Volkl and Muller 59 report dislocation densities ranging from 2 3 10 7 to 1 3 10 8 m 22 near the center to 3 3 10 8 to 2 3 10 9 m 22 in the periphery.…”
Section: B the Effects Of The Initial Dislocation Density And Initiasupporting
confidence: 79%
“…These dislocation densities are considerably lower than what our numerical model predicts when there is no stress relaxation at the solid-liquid interface, but match well the levels predicted in the presence of significant stress relaxation at the interface. Similar conclusions, namely W-shaped dislocation density profiles, have been reached by Volkl and Muller 59 and Hirano et al 80 for the case of growing InP. Volkl and Muller 59 report dislocation densities ranging from 2 3 10 7 to 1 3 10 8 m 22 near the center to 3 3 10 8 to 2 3 10 9 m 22 in the periphery.…”
Section: B the Effects Of The Initial Dislocation Density And Initiasupporting
confidence: 79%
“…The reliability and yield of the devices depend critically on the quality of SI-InP substrate material. Imperfections such as precipitate, micro defect and electrical active point defects still exist in commercially available SI-InP materials [1][2][3]. To promote the quality of SI-InP, it is necessary to study the defect formation mechanism and their influences on the material quality.…”
Section: Introductionmentioning
confidence: 99%