The optical constants of GaeslInu4sP have been determined from 0.8 to 5.0 eV using variable-angle spectroscopic ellipsometry measurements at room temperature. The metal-organic vapor-phase-epitaxy-grown samples were x-ray analyzed to confirm lattice matching to the GaAs substrate. The effects of the native oxide were numerically removed from the data to determine the intrinsic optical constants. This is important because the optical constants reported become generally useful for modeling multiple-layer structures. A Kramers-Kronig analysis was used to reduce interference-related fluctuations in the below-gap refractive index. Near the band edge a mathematical form for excitonic absorption was included. Critical point energies were extracted using a numerical second-derivative fitting algorithm. 0 1995 American Institute of Physics.

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The electrical properties of Schottky contacts (SCs) produced ex situ on n-type ZnO single crystals and epitaxial thin films were investigated. Electron beam induced current imaging was used to study lateral variations of the current induced in the space charge region of the SC. Further, the effective barrier height was determined by current–voltage and capacitance–voltage measurements. Pd contacts prepared on ZnO thin films that had undergone treatment in a plasma-enhanced chemical vapor deposition with nitrous oxide (N2O) as ambient gas are laterally homogeneous with an effective barrier height of (600±30) meV.

Epitaxial layers of monoclinic β‐Ga2O3 were successfully grown on (0001) sapphire and ($ \bar 1 $11)As GaAs substrates using metal‐organic vapor‐phase epitaxy (MOVPE). Triethylgallium (TEGa) and N2O were used as precursors for gallium and oxygen, respectively. Growth conditions could be determined, where β‐Ga2O3 grows epitaxially on c ‐plane sapphire and ($ \bar 1 $11)As GaAs substrates. X‐ray diffraction (XRD) and transmission electron microscopy (TEM) measurements identify a epitaxial relationship with ($ \bar 2 $01) β‐Ga2O3 || (0001) sapphire and ($ \bar 2 $01) β‐Ga2O3 || ($ \bar 1 $11)As GaAs. The observed sixfold rotational in‐plane symmetry results from differently oriented rotational domains of monoclinic β‐Ga2O3 with twofold symmetry. Thin films deposited on substrates of other orientation show the formation of the low‐temperature modification α‐Ga2O3. Optical transmission spectra measured in the spectral range from 200 nm to 2000 nm show a well‐distinct absorption edge at about 5 eV for layers grown on c ‐ and a ‐plane sapphire. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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