Lateral homogeneity of Schottky contacts on n-type ZnO

Wenckstern, Holger von; Кайдашев, Е. М.; Lorenz, Michael; Hochmuth, H.; Biehne, G.; Lenzner, J.; Gottschalch, V.; Pickenhain, R.; Grundmann, Marius

doi:10.1063/1.1638898

Cited by 114 publications

(55 citation statements)

References 14 publications

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“…The central axis of the nanowire remained neutral. In addition to Pt, ZnO has been reported to form Schottky diodes with a variety of metals, such as Ag [532], Au [533], Pd [534], and Ni [534]. Surface treatment can effectively improve the diode performance [535,536].…”

Section: Atomic Force Microscopy-based Nanogeneratorsmentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, positioncontrolled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

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Section: Atomic Force Microscopy-based Nanogeneratorsmentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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“…In particular, fabrication of stable and rectifying metal contacts to ZnO remains a challenge despite numerous recent investigations. [1][2][3][4][5][6][7][8][9][10][11][12] A number of studies have addressed various possible fundamental mechanisms affecting Schottky barrier ͑SB͒ performance in ZnO, 1,5,9-13 but none have considered the role of both the surface and subsurface. Thus, while several studies have proposed that surface morphology, hydroxide ͑OH͒, and carbon surface contamination play a dominant role, none have considered the role of subsurface defects and impurities that could alter local carrier concentrations, depletion widths, and tunneling.…”

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confidence: 99%

Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO

Mosbacker

Strzhemechny

White

et al. 2005

Applied Physics Letters

243

175

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A conversion from ohmic to rectifying behavior is observed for Au contacts on atomically ordered polar ZnO surfaces following remote, room-temperature oxygen plasma treatment. This transition is accompanied by reduction of the “green” deep level cathodoluminescence emission, suppression of the hydrogen donor-bound exciton photoluminescence and a ∼0.75eV increase in n-type band bending observed via x-ray photoemission. These results demonstrate that the contact type conversion involves more than one mechanism, specifically, removal of the adsorbate-induced accumulation layer plus lowered tunneling due to reduction of near-surface donor density and defect-assisted hopping transport.

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“…where A is the active contact area (110 × 10 −6 m 2 ), A* is the Richardson constant, which has a theoretical value of 32 A cm −2 K −2 for ZnO [30] and b is the Schottky barrier height. The value of I s is obtained from the extrapolated intercept of ln I versus V plot ( The ideality factor (n) and series resistance (R s ) of Schottky contacts can be obtained from following equations using the Cheung method [31]: Figure 6 shows variation of dV/d(lnI) versus I at different temperatures from which the value of n can be obtained from the intercept at the zero current axis equating to (nkT/q) in a linear fit of lower voltage region I.…”

Section: Resultsmentioning

confidence: 99%

Hysteresis-free DC conduction in zinc oxide films with a conducting polymer counter electrode

Paul

Harris

Sharma

et al. 2017

J Mater Sci: Mater Electron

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A conducting polymer, namely poly (3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has been employed as an alternative metal counter electrode to study steady state charge conduction through a spin-coated 5.2 µm thick ZnO film in a sandwich structure on a fluorine doped tin oxide coated glass substrate. The room temperature current-voltage characteristics exhibit rectifying behaviour without hysteresis as the bias voltage is cycled between ± 10V for varying voltage sweep rate from 100 to 1000 mV/s. Thermionic emission is believed to be the dominant conduction mechanism at forward bias voltage V ≤ 2.5 V whereas the space charge limited current conduction becomes effective in a higher voltage region V > 2.5 V. The barrier height (φ b ), ideality factor (n) and series resistance (R s ) are found to be strongly temperature dependent parameters showing the increase of b and simultaneous decreases of n and R s within the range of 218-298 K. The behaviour of the temperature dependent charge carrier mobility in the higher voltage region has also been discussed. The use of PEDOT:PSS is quite promising as an alternative to metal electrodes in semiconductor devices.

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Lateral homogeneity of Schottky contacts on n-type ZnO

Cited by 114 publications

References 14 publications

One-dimensional ZnO nanostructures: Solution growth and functional properties

One-dimensional ZnO nanostructures: Solution growth and functional properties

Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO

Hysteresis-free DC conduction in zinc oxide films with a conducting polymer counter electrode

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