Simulation of 50-nm Gate Graphene Nanoribbon Transistors

Abstract

An approach to simulate the steady-state and small-signal behavior of GNR MOSFETs (graphene nanoribbon metal-semiconductor-oxide field-effect transistor) is presented. GNR material parameters and a method to account for the density of states of one-dimensional systems like GNRs are implemented in a commercial device simulator. This modified tool is used to calculate the current-voltage characteristics as well the cutoff frequency f T and the maximum frequency of oscillation f max of GNR MOSFETs. Exemplarily, we consider 50-nm gate GNR MOSFETs with N = 7 armchair GNR channels and examine two transistor configurations. The first configuration is a simplified MOSFET structure with a single GNR channel as usually studied by other groups. Furthermore, and for the first time in the literature, we study in detail a transistor structure with multiple parallel GNR channels and interribbon gates. It is shown that the calculated f T of GNR MOSFETs is significantly lower than that of GFETs (FET with gapless large-area graphene channel) with comparable gate length due to the mobility degradation in GNRs. On the other hand, GNR MOSFETs show much higher f max compared to experimental GFETs due the semiconducting nature of the GNR channels and the resulting better saturation of the drain current. Finally, it is shown that the gate control in FETs with multiple parallel GNR channels is improved while the cutoff frequency is degraded compared to single-channel GNR MOSFETs due to parasitic capacitances of the interribbon gates.

Graphene Nanoribbons for Electronic Devices

“…In the present work, we follow a different approach and use a classical device simulator for the investigation of GNR MOSFETs. To this end, an approach to account for the density of states in one‐dimensional systems like GNRs by properly adjusting the carrier effective mass m eff has been elaborated . Together with the v ‐ E characteristics according to equation with the parameters from Table , this approach has been implemented in the commercial device simulator ATLAS.…”

Two-Dimensional Electronics - Prospects and Challenges

“…This Special Issue comprises a total of 12 papers (four review papers and eight contributed articles) and spans a wide range of topics, which extend from first principle band structure calculations [14] and molecular dynamics simulations of the thermal properties [15] of 2D materials, over numerical simulations and compact modeling of 2D transistors [16][17][18] and other 2D devices [19,20], 2D material growth [21,22] and processing issues [22][23][24], up to experimental 2D devices and their applications [22,23,25]. Regarding the materials, the papers of the Special Issue deal with graphene and graphene nanoribbons [16][17][18][19][20]22,23,25], TMDs (transition metal dichalcogenide) [14,21,22,24,25], phosphorene, which frequently is called 2D black phosphorus [24,25], and 2D metal oxides [25].…”

“…Regarding the materials, the papers of the Special Issue deal with graphene and graphene nanoribbons [16][17][18][19][20]22,23,25], TMDs (transition metal dichalcogenide) [14,21,22,24,25], phosphorene, which frequently is called 2D black phosphorus [24,25], and 2D metal oxides [25]. Finally, the papers discuss More Moore electronics and transistors [16][17][18], as well as applications belonging to the More Than Moore domain of semiconductor electronics, including optoelectronics [22], RF electronics [16,23], sensors [20,25], and field emitters [19].…”

“…Banadaki and Srivastava investigate the effects of band-to-band tunneling and edge roughness on the behavior of graphene nanoribbon MOSFETs [18]. Nanmeni Bondja and coworkers study the steady-state and RF performance of graphene nanoribbon transistors by numerical device simulations [16]. Finally, in the third transistor paper, Fregonese and coauthors describe a compact modeling approach for a novel graphene-based transistor type called graphene base transistor [17].…”

Analysis of black phosphorus double gate MOSFET using hybrid method for analogue/RF application

“…So far, there are no device simulation tools available to analyse and assess the device characteristics with 2D channel materials. Many attempts have been made to build a new simulation tool that incorporates the transport mechanism of 2D materials with reduced computational cost [16][17][18]. Hence, the need for a sophisticated method with reduced computational cost with better accuracy has aroused for accurate modelling of 2D material devices.…”