This work examines the prospect of phosphorene antidot nanoribbons (PANRs) using the density functional based tight binding (DFTB) method. Horizontally perforated PANRs with both armchair (A) and zigzag (Z) configurations were considered for electrical simulations. Our simulation results found that the APANRs cannot be scaled down with nanoribbon width, whereas ZPANRs can be scaled easily. Bandgap scaling in terms of ribbon width, length and antidot number was thoroughly analyzed for ZPANRs. In the end, a two-terminal device was constructed and transmission analysis was performed using the non-equilibrium Green's function (NEGF) methodology. A negative differential resistance (NDR) region appeared in the current-voltage characteristics of the ZPANRs, which paved a pathway for nano-device application.

No abstract

Two-dimensional (2D) materials like graphene, phosphorene, germanene, silicene, and transition metal dichalcogenides have attracted intense research attention because of their rich physics and potential for integration into next-generation electronic devices. These materials offer superior electrostatic control to their bulk counterparts, which makes them fascinating for device fabrication. After graphene and MoS 2 , the most intensively explored 2D material is black phosphorus (BP). During the past half-decade, BP has notably achieved excellent performance when included in transistors. This review paper aims to throw some light on BP properties and their performance in a field effect transistor device. The state-of-the-art BP transistors are reviewed, and a balanced view of both the benefits and drawbacks is provided. Keywords 2D material • black phosphorous • phosphorene • TCAD • DFT • MOSFET • TFET* Ramesh Rathinam

No abstract