Bone abnormalities of the sacrum, neurological deficits, and operable intraspinal lesions are not uncommon in children with anorectal malformations. Because the neurological deficits can contribute to the disability suffered by these individuals, we recommend routine screening of patients with anorectal malformations and neurological deficits and/or sacral abnormalities for the early identification and treatment of potentially correctable intraspinal lesions.

Using density functional theory with meta generalized gradient approximation functional, we investigate scalable electronic and optical properties in twisted hydrogen passivated monolayer black phosphorus nanoribbons (PNRs) by twisting around a specified axis while varying the twisting angle up to 5°. We found that after twisting, the electronic tunability is significant for Armchair configuration of PNR (APNR). We have observed that the bandgap variation of H-passivated APNR upon twisting attains a maximum change of 132 meV per degree twist, and the twisted APNR bandgap is close to the bandgap of oxygen passivated non-twisted ones. Similarly, optical properties of APNR vary significantly upon twisting, which was confirmed by analyzing absorption spectra and optical bandgap. The extended spectral region in twisted APNR, which broadens from the mid-infra-red to the visible region, approaches the oxygenated effect. This tunability of electronic bandgaps and optical properties would ameliorate PNR based optoelectronic devices.

Two-dimensional (2D) materials like graphene, phosphorene, germanene, silicene, and transition metal dichalcogenides have attracted intense research attention because of their rich physics and potential for integration into next-generation electronic devices. These materials offer superior electrostatic control to their bulk counterparts, which makes them fascinating for device fabrication. After graphene and MoS 2 , the most intensively explored 2D material is black phosphorus (BP). During the past half-decade, BP has notably achieved excellent performance when included in transistors. This review paper aims to throw some light on BP properties and their performance in a field effect transistor device. The state-of-the-art BP transistors are reviewed, and a balanced view of both the benefits and drawbacks is provided. Keywords 2D material • black phosphorous • phosphorene • TCAD • DFT • MOSFET • TFET* Ramesh Rathinam

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