Analysis of black phosphorus double gate MOSFET using hybrid method for analogue/RF application

Rathinam, Ramesh; Pon, Adhithan; Carmel, Santhia; Bhattacharyya, Arkaprava

doi:10.1049/iet-cds.2020.0092

Cited by 9 publications

(3 citation statements)

References 32 publications

(46 reference statements)

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“…Figure 8a and b shows the I d -V gs characteristics of a DG-BP MOSFET and DG-BP TFET obtained using our method. It is found that the results show sufficient accuracy with less computational cost, 109 and it is suitable for simulating FET devices with other 2D materials. This method is also suitable for studying the RF and transition behavior of 2D material FET devices.…”

Section: Hybrid Methodsmentioning

confidence: 88%

“…[105][106][107] Our research group developed a new method (hybrid) that includes both DFT and technology computer-aided design (TCAD) tools to simulate the phosphorene-based FET device characteristics. 108,109 The overall methodology consists of two sections: (1) computation of the phosphorene layer electrical parameters using DFT and the Quantumwise tool; and (2) incorporating the electrical parameters into device simulation using TCAD. The detailed methodology flow is shown in Fig.…”

Section: Hybrid Methodsmentioning

confidence: 99%

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Recent Developments in Black Phosphorous Transistors: A Review

Pon

Bhattacharyya

Rathinam

2021

J. Electron. Mater.

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Two-dimensional (2D) materials like graphene, phosphorene, germanene, silicene, and transition metal dichalcogenides have attracted intense research attention because of their rich physics and potential for integration into next-generation electronic devices. These materials offer superior electrostatic control to their bulk counterparts, which makes them fascinating for device fabrication. After graphene and MoS 2 , the most intensively explored 2D material is black phosphorus (BP). During the past half-decade, BP has notably achieved excellent performance when included in transistors. This review paper aims to throw some light on BP properties and their performance in a field effect transistor device. The state-of-the-art BP transistors are reviewed, and a balanced view of both the benefits and drawbacks is provided. Keywords 2D material • black phosphorous • phosphorene • TCAD • DFT • MOSFET • TFET* Ramesh Rathinam

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Section: Hybrid Methodsmentioning

confidence: 88%

Section: Hybrid Methodsmentioning

confidence: 99%

Recent Developments in Black Phosphorous Transistors: A Review

Pon

Bhattacharyya

Rathinam

2021

J. Electron. Mater.

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“…It has been said that the performance of BP transistors can be higher than that of their MoS2 equivalents [16]. Applications of BP as radio-frequency (RF) transistors have also been investigated alongside nanotransistors [19,[22][23][24][25][26][27][28]. Theoretically estimated high RF figures of merit have a unity…”

Section: Introductionmentioning

confidence: 99%

DC and RF Performance of an N-channel Monolayer Black Phosphorus Nanoribbon Transistor

Alam

2023

J. Electron. Electric. Eng.

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Two-dimensional black phosphorus is a relatively new discovery. There are numerous studies on black phosphorus two-dimensional transistors that focus on analog and RF performance. However, the RF performance of black phosphorus nanoribbon transistors is yet to be explored. We use a four-band tight binding Hamiltonian in conjunction with a non-equilibrium Green's function quantum transport simulator to investigate both the DC and RF performance of a monolayer black phosphorus nanoribbon transistor. We found that electron intra-band tunneling is responsible for current flow in the off-state, while in the on-state, the electrons flow over the top of the channel barrier potential. With a VDD of 0.4 volt and a gate length of 5 nm, our black phosphorus nanoribbon transistor has DC performance metrics of 510 µA/µm on-state current, 105 on/off current ratio, and 65 mV/dec inverse subthreshold slope. The device's RF performance characteristics are as follows: cut-off (unity current gain) frequency of 772.84 GHz, maximum oscillation (unity power gain) frequency of 1.15 THz, and open circuit voltage gain of 26.7 dB with transistor operating in the on-state. The RF performance of the device is found to be significantly impacted by the source and drain contact resistances. With source and drain resistances set to zero, the cut-off frequency increases to 995.23 GHz and the unity power gain frequency increases to 4.16 THz. The device shows unconditional stability above 893 GHz and it is conditionally stable below this frequency.

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Low-frequency noise performance of a molybdenum ditelluride double-gate MOSFET

Manjula

Ramesh

2023

J Comput Electron

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Analysis of black phosphorus double gate MOSFET using hybrid method for analogue/RF application

Cited by 9 publications

References 32 publications

Recent Developments in Black Phosphorous Transistors: A Review

Recent Developments in Black Phosphorous Transistors: A Review

DC and RF Performance of an N-channel Monolayer Black Phosphorus Nanoribbon Transistor

Low-frequency noise performance of a molybdenum ditelluride double-gate MOSFET

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