Simple technique for measuring cavity loss in semiconductor lasers

Ketelsen, L.J.P.

doi:10.1049/el:19940930

Cited by 21 publications

(11 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…30 The values of total loss were determined through the TE-TM-gain-crossing method previously applied to telecommunication lasers. 31 Similar total losses were obtained from the long-wavelength modal gain saturation values 32 (see Figure 6). The internal loss, cc^t, and the device internal efficiency, riint, were calculated using measured slope efficiency and known device mirror loss ot m .…”

Section: High-power Room-temperature Cw Diode Lasers Operating In Thesupporting

confidence: 67%

MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES

Donetsky

Martinelli

Belenky

2002

Int. J. Hi. Spe. Ele. Syst.

View full text Add to dashboard Cite

The design of room-temperature, InGaAsSb/AlGaAsSb diode lasers has evolved from the first double-heterojunction lasers described in 1980 that operated in the pulsed-current mode to presentday continuous-wave (CW), high-power, quantum-well diode lasers. We discuss in detail recent results from type-I-heterostructure, GaSb-based CW room-temperature diode lasers. The devices operate within the wavelength range of 1.8 to 2.7 um, providing output powers up to several Watts. We analyze the factors limiting device performance.

show abstract

Section: High-power Room-temperature Cw Diode Lasers Operating In Thesupporting

confidence: 67%

MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES

Donetsky

Martinelli

Belenky

2002

Int. J. Hi. Spe. Ele. Syst.

View full text Add to dashboard Cite

show abstract

“…A technique based on below-bandgap measurements [34,35] is made difficult by the low intensity of ASE in this region, which limits the accuracy of the gain measurements. For the gain spectra shown in Fig.…”

Section: Measurement Of the Optical Lossmentioning

confidence: 99%

Advances in Measurements of Physical Parameters of Semiconductor Lasers

SHTENGEL¹,

KAZARINOV²,

BELENKY³

et al. 2000

Selected Topics in Electronics and Systems

View full text Add to dashboard Cite

We present a summary of advances in characterization techniques allowing for comprehensive study of physical processes in semiconductor lasers. 5. Electrical and optical measurements of RF modulation response below threshold. 5.1. Determination of the differential carrier lifetime from the device impedance. 5.2. Determination of the differential carrier lifetime from the optical response measurements. 6. Optical measurements of RF modulation response and RIN above threshold 6.1. Determination of the resonant frequency and damping factor using carrier subtraction technique. Determination of the differential gain and the gain compression coefficient. 6.2. Determination of the resonant frequency and differential gain from the RIN measurements. 7. Measurements of the linewidth enhancement factor. 7.1. Measurements of linewidth enhancement factorfrom ASE and TSE spectra. 8. Measurements of the carrier temperature and carrier heating in semiconductor lasers. 8.1. Determination of carrier heating from wavelength chirp and TSE measurements. 9. References.

show abstract

“…Figure 2(b) shows the laser spectrum, whose central wavelength was 1490 nm. The modal loss ␣ i was estimated as 28 cm −1 , using Hakki-Paoli measurements below the bandgap [15]. The measured values of diff and ␣ i correspond to an internal quantum efficiency of 0.54.…”

mentioning

confidence: 99%

Electrically pumped hybrid evanescent Si/InGaAsP lasers

et al. 2009

View full text Add to dashboard Cite

Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III-V gain material for the first time to our knowledge. The lasing threshold current of 300-m-long devices was as low as 24 mA, with a maximal single facet output power of 4.2 mW at 15°C. Longer devices achieved a maximal single facet output power as high as 12.7 mW, a single facet slope efficiency of 8.4%, and a lasing threshold current density of 1 kA/cm 2 . Continuous wave laser operation was obtained up to 45°C. The threshold current density, output power, and efficiency obtained improve upon those of previously reported devices having a similar geometry. Facet images indicate that the output light is largely confined to the Si waveguide.

show abstract

Simple technique for measuring cavity loss in semiconductor lasers

Cited by 21 publications

References 2 publications

MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES

MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES

Advances in Measurements of Physical Parameters of Semiconductor Lasers

Electrically pumped hybrid evanescent Si/InGaAsP lasers

Contact Info

Product

Resources

About