MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES

Abstract

The design of room-temperature, InGaAsSb/AlGaAsSb diode lasers has evolved from the first double-heterojunction lasers described in 1980 that operated in the pulsed-current mode to presentday continuous-wave (CW), high-power, quantum-well diode lasers. We discuss in detail recent results from type-I-heterostructure, GaSb-based CW room-temperature diode lasers. The devices operate within the wavelength range of 1.8 to 2.7 um, providing output powers up to several Watts. We analyze the factors limiting device performance.

GaSb film growth by liquid phase epitaxy

“…Besides these properties, ternary and quaternary alloys containing GaSb offer a wide range of tunable bandgaps (0.3-2.16 eV) without a significant lattice distortion. Such characteristics present GaSb as a protruding alternative in applications of high frequency devices, infrared detectors and sources, laser diodes, high efficiency photodetectors, solar cells, long wavelength photonic devices, superlattices and quantum well devices [3][4][5][6][7]. GaSb is a binary compound with zinc-blend structure and a 0.73 eV bandgap (@300K) [2,3,6].…”