Principal energy band gaps of the quaternary alloy AlxGa1−xSbyAs1−y

Shim, Kyurhee

doi:10.1016/j.ssc.2004.12.004

Cited by 7 publications

(9 citation statements)

References 15 publications

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“…Applying the tight-binding method to the same interface within the extended virtual crystal approximation which incorporates the compositional disorder, Rabeh et al [40] have found for E g the lawE g (x) = 0.705 + 0.895x + 0.486x 2 . A crossover from indirect to a direct band gap is observed at aluminum composition x = 0.45, which is in agreement with the results reported by [14] and [41].…”

Section: Resultssupporting

confidence: 92%

A multi-color quantum well photodetector for mid- and long-wavelength infrared detection

Jdidi¹,

Sfina²,

Nassrallah³

et al. 2011

Semicond. Sci. Technol.

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The authors report a two-color quantum well infrared photodetector at room temperature operating in the mid-and long-wavelength infrared detection. To this purpose, the band alignment is tailored and electronic properties are investigated for the proposed structure based on Ga 1−x In x As y Sb 1−y /GaSb and Al x Ga 1−x As y Sb 1−y /GaSb. As accurate knowledge of band offsets is required in device modeling, we have proceeded to theoretical investigations of the band offsets for pseudo-morphically strained and lattice-matched Ga 1−x In x As y Sb 1−y /GaSb and Al x Ga 1−x As y Sb 1−y /GaSb heterointerfaces in the whole range of alloy compositions 0 x, y 1. The carrier effective masses are deduced from the laws extracted from the k.p strain Hamiltonian laws. For the modeled heterostructure, the dark current of about 10 −1 A cm −2 at ambient temperature shows the high performance of this multi-color infrared photodetector around 5 and 12.5 μm wavelengths.

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Section: Resultssupporting

confidence: 92%

A multi-color quantum well photodetector for mid- and long-wavelength infrared detection

Jdidi¹,

Sfina²,

Nassrallah³

et al. 2011

Semicond. Sci. Technol.

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“…While this constitutes a significant improvement over the bare GaSb buffer, the resistance is still not sufficient to isolate nanostructures as efficiently as a semi-insulating substrate. Sample C is comprised of an Al 0.35 Ga 0.65 Sb buffer that has a larger bandgap (1.2 eV [20]) but is not well lattice-matched (mismatch of 0.23%) in comparison with the GaSb buffer of Sample A. Sample D has a buffer made of the ternary alloy AlSb 0.91 As 0.09 that is characterized by a bandgap twice as large (2.4 eV [20]) and better lattice matching to GaSb (mismatch −0.1%) than Sample C. For these samples, Al 2 O 3 is used as dielectric to reduce the thermal budget during processing.…”

Section: Device Isolationmentioning

confidence: 99%

“…Sample C is comprised of an Al 0.35 Ga 0.65 Sb buffer that has a larger bandgap (1.2 eV [20]) but is not well lattice-matched (mismatch of 0.23%) in comparison with the GaSb buffer of Sample A. Sample D has a buffer made of the ternary alloy AlSb 0.91 As 0.09 that is characterized by a bandgap twice as large (2.4 eV [20]) and better lattice matching to GaSb (mismatch −0.1%) than Sample C. For these samples, Al 2 O 3 is used as dielectric to reduce the thermal budget during processing. Despite the nominally better intrinsic properties of these two buffer materials, we still measured a resistance of a few MΩs.…”

Section: Device Isolationmentioning

confidence: 99%

High-mobility InAs 2DEGs on GaSb substrates: A platform for mesoscopic quantum transport

Thomas

Hatke

Tuaz

et al. 2018

Phys. Rev. Materials

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High mobility, strong spin-orbit coupling, and large Landé g-factor make the two-dimensional electron gas (2DEG) in InAs quantum wells grown on nearly-lattice-matched GaSb substrates an attractive platform for mesoscopic quantum transport experiments. Successful operation of mesoscopic devices relies on three key properties: electrical isolation from the substrate; ability to fully deplete the 2DEG and control residual sidewall conduction with lithographic gates; and high mobility to ensure ballistic transport over mesoscopic length scales. Simultaneous demonstration of these properties has remained elusive for InAs 2DEGs on GaSb substrates. Here we report on heterostructure design, molecular beam epitaxy growth, and device fabrication that result in high carrier mobility and full 2DEG depletion with minimal residual edge conduction. Our results provide a pathway to fully-controlled 2DEG-based InAs mesoscopic devices.

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“…The lattice constant “a” varies linearly with composition (known as Vegard’s law). Accordingly, the lattice-matching conditions for quaternary alloys on a GaSb substrate can be written as follows [3,4]:AlxGa1−normalxAsySb1−normaly: y=0.0396x0.4426+0.0318x (0≤x≤1) GaxIn1−normalxAsySb1−normaly: y=0.3835−0.3835x0.4210+0.0216x (0≤x≤1)…”

Section: Introductionmentioning

confidence: 99%

PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE

Cheng

Lin

et al. 2019

Materials

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This paper discusses the issue of controlling the epitaxial growth of mixed group V alloys to form a type-I InGaAsSb/AlGaAsSb double quantum wells (QWs) structure. We also discuss the run-to-run reproducibility of lattice-matched AlGaAsSb alloys and strained In0.35Ga0.65As0.095Sb0.905 in terms of growth parameters (V/III ratio, Sb2/As2 ratio). Molecular beam epitaxy (MBE) was used to grow two type-I InGaAsSb double-QWs laser structures differing only in the composition of the bottom cladding layer: Al0.85Ga0.15As0.072Sb0.928 (sample A) and Al0.5Ga0.5As0.043Sb0.957 (sample B). Both samples were respectively used in the fabrication of photonic crystal surface-emitting lasers (PCSELs). Sample A presented surface lasing action from circular as well as triangular photonic crystals. Sample B did not present surface lasing due to the deterioration of the active region during the growth of the upper cladding. Our findings underline the importance of temperature in the epitaxial formation of AlxGa1−xAsySb1−y in terms of lasing performance.

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Principal energy band gaps of the quaternary alloy AlxGa1−xSbyAs1−y

Cited by 7 publications

References 15 publications

A multi-color quantum well photodetector for mid- and long-wavelength infrared detection

A multi-color quantum well photodetector for mid- and long-wavelength infrared detection

High-mobility InAs 2DEGs on GaSb substrates: A platform for mesoscopic quantum transport

PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE

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