PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE

Abstract

This paper discusses the issue of controlling the epitaxial growth of mixed group V alloys to form a type-I InGaAsSb/AlGaAsSb double quantum wells (QWs) structure. We also discuss the run-to-run reproducibility of lattice-matched AlGaAsSb alloys and strained In0.35Ga0.65As0.095Sb0.905 in terms of growth parameters (V/III ratio, Sb2/As2 ratio). Molecular beam epitaxy (MBE) was used to grow two type-I InGaAsSb double-QWs laser structures differing only in the composition of the bottom cladding layer: Al0.85Ga0.15As0.072Sb0.928 (sample A) and Al0.5Ga0.5As0.043Sb0.957 (sample B). Both samples were respectively used in the fabrication of photonic crystal surface-emitting lasers (PCSELs). Sample A presented surface lasing action from circular as well as triangular photonic crystals. Sample B did not present surface lasing due to the deterioration of the active region during the growth of the upper cladding. Our findings underline the importance of temperature in the epitaxial formation of AlxGa1−xAsySb1−y in terms of lasing performance.

Effect of Hole Shift on Threshold Characteristics of GaSb-Based Double-Hole Photonic-Crystal Surface-Emitting Lasers

“…The radii of the holes for the single-hole case are r 1 , and r 2 for the double-hole case. The fabrication process details can be found in [ 8 ].…”

“…The radii of the holes for the single-hole case are r 1 , and r 2 for the double-hole case. The fabrication process details can be found in [8]. The lattice period was fixed at 650 nm and the designed FF (filling factor, fraction of the hole area in a unit cell) was 10%.…”

“…However, the lasing wavelengths of high performance lasers composed of type-I InGaAsSb/AlGaAsSb quantum-well (QW) heterostructures are not beyond 3 μm or, in particular, below 2.5 μm [ 5 ]. In recent years, epitaxial laser structures on GaSb substrates became the platform for our PC-SEL study [ 6 , 7 , 8 , 9 ]. There are at least three advantages that can be addressed.…”

Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers

“…By properly designing two-dimensional (2D) photonic crystals (PhC) that satisfy a specific Bragg condition, light waves from gain media can couple with PhC, whereby a 2D cavity mode is constructed to produce lasing emissions from the surface of the device. GaSb-based PCSELs are designed in connection to the abovementioned TDLAS sensors; however, only optically pumped devices are successfully demonstrated [5,7], while electrically pumped ones are still in development [8].…”

Structural properties of GaInAsSbBi solid solutions grown on GaSb substrates

“…In heteroepitaxy of solid solutions on binary substrates, the array mismatch between the thin film and the substrate, as well as the substrate misorientation [7] have a significant influence on the crystal structure and morphology of the deposited material. Previously, researchers have studied GaSb-based heterostructures that do not contain Bi [8][9][10]. The molecular beam epitaxy of GaInAsSb solid solution with Bi fraction of 0.13% on GaSb (100) substrates [5] has been known to be realized by now.…”