Advances in Measurements of Physical Parameters of Semiconductor Lasers

SHTENGEL, G. E.; KAZARINOV, R. F.; BELENKY, G. L.; HYBERTSEN, M. S.; ACKERMAN, D. A.

doi:10.1142/9789812793614_0003

Cited by 5 publications

(5 citation statements)

References 43 publications

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“…7 we plot the estimated threshold current dispersion, which agrees well with the experiment. In general, the linewidth enhancement factor α H varies strongly with the wavelength and carrier density [21]. We also observe such strong variation of α H in our GaAs gain chip.…”

Section: B Microscopic Parameter Extractionsupporting

confidence: 51%

“…In addition to the behavior of the net modal gain coefficient with the temperature and pump current, we extracted the phase amplitude coupling coefficient α H by taking a difference between the two measurements in Figs. 4 and 5 [21]. Note that a strong phase amplitude coupling in semiconductor laser increases the frequency noise and causes the linewidth enhancement by a factor of 1 + α 2 H .…”

Section: B Microscopic Parameter Extractionmentioning

confidence: 98%

See 1 more Smart Citation

GaSb Swept-Wavelength Lasers for Biomedical Sensing Applications

Vizbaras¹,

Šimonytė²,

Droz

et al. 2019

IEEE J. Select. Topics Quantum Electron.

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Infrared spectral range between 1.7 and 2.5 µm is of particular interest for biomedical sensing applications due to the presence of first overtone C-H stretch and a combination of stretch and bending vibrations of C-H, N-H, and O-H bonds. These vibrations are molecule specific and can be used to selectively sense important biomolecules such as glucose, lactate, urea, ammonia, serum albumin, etc. In this paper, we review recent developments of swept-wavelength lasers based on GaSb type-I gain-chip technology, their key performance parameters for spectroscopy applications and provide experimental data on spectroscopic sensing of the key biomolecules both in synthetic solutions as well as whole blood.

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Section: B Microscopic Parameter Extractionsupporting

confidence: 51%

Section: B Microscopic Parameter Extractionmentioning

confidence: 98%

GaSb Swept-Wavelength Lasers for Biomedical Sensing Applications

Vizbaras¹,

Šimonytė²,

Droz

et al. 2019

IEEE J. Select. Topics Quantum Electron.

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“…To further understand the effect of material improvement on the laser performance, comprehensive gain characteristics, loss mechanism, and injection efficiency have been investigated on the QD lasers epitaxially grown on Si. Inside a Fabry−Perot laser cavity, the below-threshold amplified spontaneous emission (ASE) spectrum can be described by 12…”

mentioning

confidence: 99%

Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency

et al. 2017

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Quantum dot lasers epitaxially grown on Si are promising for an efficient light source for silicon photonics. Recently, considerable progress has been made to migrate 1.3 μm quantum dot lasers from off-cut Si to on-axis (001) Si substrates. Here, we report significantly improved performance and reliability of quantum dot lasers enabled by a low threading dislocation density GaAs buffer layer. Continuous-wave threshold currents as low as 6.2 mA and output powers of 185 mW have been achieved at 20 °C. Reliability tests after 1500 h at 35 °C showed an extrapolated mean-time-to-failure of more than a million hours. Direct device transparency and amplified spontaneous emission measurements reveal an internal optical loss as low as 2.42 cm −1 and injection efficiency of 87%. This represents a significant stride toward efficient, scalable, and reliable III−V lasers on onaxis Si substrates for photonic integrate circuits that are fully compatible with CMOS foundries.

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“…15 RIN is a common method for characterisation of the modulation bandwidth of semiconductor lasers. 16 …”

Section: Using Rin Spectra To Measure Absorptionmentioning

confidence: 99%

RIN spectra of a two-mode lasing two-section DFB laser for optical sensor application

et al. 2008

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We present an alternative method of determining the oscillating state of a laser and demonstrate the suitability of relative intensity noise (RIN) measurements for this purpose.The experiments were carried out using a two-section DFB laser. Optical and RIN spectra have been recorded and correlated subsequently. The variation of the maxima of the RIN spectra have been evaluated with respect to intensity and position in the frequency domain. Varying the frequency, a distinct transition in the above mentioned parameters can be observed, wich can be correlated clearly to the mode degeneracy at the transition and a dominating oscillating mode below and above. This delivers a conclusive means of determining the lasing state from RIN spectra.

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Advances in Measurements of Physical Parameters of Semiconductor Lasers

Cited by 5 publications

References 43 publications

GaSb Swept-Wavelength Lasers for Biomedical Sensing Applications

GaSb Swept-Wavelength Lasers for Biomedical Sensing Applications

Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency

RIN spectra of a two-mode lasing two-section DFB laser for optical sensor application

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