Although gigahertz-scale free-carrier modulators have been demonstrated in silicon, intensity modulators operating at terahertz speeds have not been reported because of silicon's weak ultrafast nonlinearity. We have demonstrated intensity modulation of light with light in a silicon-polymer waveguide device, based on the all-optical Kerr effect-the ultrafast effect used in four-wave mixing. Direct measurements of time-domain intensity modulation are made at speeds of 10 GHz. We showed experimentally that the mechanism of this modulation is ultrafast through spectral measurements, and that intensity modulation at frequencies in excess of 1 THz can be obtained. By integrating optical polymers through evanescent coupling to silicon waveguides, we greatly increase the effective nonlinearity of the waveguide, allowing operation at continuous-wave power levels compatible with telecommunication systems. These devices are a first step in the development of large-scale integrated ultrafast optical logic in silicon, and are two orders of magnitude faster than previously reported silicon devices.

Practical quantum computing will require error rates well below those achievable with physical qubits. Quantum error correction1,2 offers a path to algorithmically relevant error rates by encoding logical qubits within many physical qubits, for which increasing the number of physical qubits enhances protection against physical errors. However, introducing more qubits also increases the number of error sources, so the density of errors must be sufficiently low for logical performance to improve with increasing code size. Here we report the measurement of logical qubit performance scaling across several code sizes, and demonstrate that our system of superconducting qubits has sufficient performance to overcome the additional errors from increasing qubit number. We find that our distance-5 surface code logical qubit modestly outperforms an ensemble of distance-3 logical qubits on average, in terms of both logical error probability over 25 cycles and logical error per cycle ((2.914 ± 0.016)% compared to (3.028 ± 0.023)%). To investigate damaging, low-probability error sources, we run a distance-25 repetition code and observe a 1.7 × 10−6 logical error per cycle floor set by a single high-energy event (1.6 × 10−7 excluding this event). We accurately model our experiment, extracting error budgets that highlight the biggest challenges for future systems. These results mark an experimental demonstration in which quantum error correction begins to improve performance with increasing qubit number, illuminating the path to reaching the logical error rates required for computation.

Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III-V gain material for the first time to our knowledge. The lasing threshold current of 300-m-long devices was as low as 24 mA, with a maximal single facet output power of 4.2 mW at 15°C. Longer devices achieved a maximal single facet output power as high as 12.7 mW, a single facet slope efficiency of 8.4%, and a lasing threshold current density of 1 kA/cm 2 . Continuous wave laser operation was obtained up to 45°C. The threshold current density, output power, and efficiency obtained improve upon those of previously reported devices having a similar geometry. Facet images indicate that the output light is largely confined to the Si waveguide.

This paper presents details of the SkySat-1 mission, which is the first microsatellite-class commercial earthobservation system to generate sub-meter resolution panchromatic imagery, in addition to sub-meter resolution 4-band pan-sharpened imagery. SkySat-1 was built and launched for an order of magnitude lower cost than similarly performing missions. The low-cost design enables the deployment of a large imaging constellation that can provide imagery with both high temporal resolution and high spatial resolution.One key enabler of the SkySat-1 mission was simplifying the spacecraft design and instead relying on groundbased image processing to achieve high-performance at the system level. The imaging instrument consists of a custom-designed high-quality optical telescope and commercially-available high frame rate CMOS image sensors. While each individually captured raw image frame shows moderate quality, ground-based image processing algorithms improve the raw data by combining data from multiple frames to boost image signal-to-noise ratio (SNR) and decrease the ground sample distance (GSD) in a process Skybox calls "digital TDI". Careful quality assessment and tuning of the spacecraft, payload, and algorithms was necessary to generate high-quality panchromatic, multispectral, and pan-sharpened imagery. Furthermore, the framing sensor configuration enabled the first commercial High-Definition full-frame rate panchromatic video to be captured from space, with approximately 1 meter ground sample distance.Details of the SkySat-1 imaging instrument and ground-based image processing system are presented, as well as an overview of the work involved with calibrating and validating the system. Examples of raw and processed imagery are shown, and the raw imagery is compared to pre-launch simulated imagery used to tune the image processing algorithms.

By using a dry etch chemistry which relies on the highly preferential etching of silicon, over that of gallium (Ga), we show resist-free fabrication of precision, high aspect ratio nanostructures and microstructures in silicon using a focused ion beam (FIB) and an inductively coupled plasma reactive ion etcher (ICP-RIE). Silicon etch masks are patterned via Ga(+) ion implantation in a FIB and then anisotropically etched in an ICP-RIE using fluorinated etch chemistries. We determine the critical areal density of the implanted Ga layer in silicon required to achieve a desired etch depth for both a Pseudo Bosch (SF(6)/C(4)F(8)) and cryogenic fluorine (SF(6)/O(2)) silicon etching. High fidelity nanoscale structures down to 30 nm and high aspect ratio structures of 17:1 are demonstrated. Since etch masks may be patterned on uneven surfaces, we utilize this lithography to create multilayer structures in silicon. The linear selectivity versus implanted Ga density enables grayscale lithography. Limits on the ultimate resolution and selectivity of Ga lithography are also discussed.