Electrically pumped hybrid evanescent Si/InGaAsP lasers

Abstract

Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III-V gain material for the first time to our knowledge. The lasing threshold current of 300-m-long devices was as low as 24 mA, with a maximal single facet output power of 4.2 mW at 15°C. Longer devices achieved a maximal single facet output power as high as 12.7 mW, a single facet slope efficiency of 8.4%, and a lasing threshold current density of 1 kA/cm 2 . Continuous wave laser operation was obtained up to 45°C. The threshold current density, output power, and efficiency obtained improve upon those of previously reported devices having a similar geometry. Facet images indicate that the output light is largely confined to the Si waveguide.

Emerging heterogeneous integrated photonic platforms on silicon

“…Detailed reviews of these works can be found elsewhere [73,94]. Also, other researchers have shown very similar lasers with InGaAsP, rather than AlGaInAs, multi-quantum well active regions [95].…”

Advanced Plasma Processing: Etching, Deposition, and Wafer Bonding Techniques for Semiconductor Applications

“…The pyramids at the top of p-InP layer are results of HCl wet etching during InP substrate removal due to the damaged outer InGaAs layer. With this epilayer transferring technology, the two disparate materials Si and III-V's now can be brought together to realize a variety of active devices on Si, such as lasers (Fang et al, 2006;Fang et al, 2008;Sun et al, 2009), amplifiers (Park et al, 2007a), modulators Kuo et al, 2008), and detectors (Park et al, 2007b). To take the hybrid Si lasers for an example: as seen in Fig.…”

“…The III-V epilayer has been reported to be AlGaInAs (Fang et al, 2006) or InGaAsP (Sun et al, 2009) quaternary semiconductor compounds, either of which can be epigrown onto an InP substrate with very high crystal quality with current state of the art. In our work (Sun et al, 2009) the thicknesses of the buried SiO 2 layer and the undoped Si device layer are respectively 2.0 μm and 0.9 μm. The Si waveguide is defined using e-beam lithography and SF 6 /C 4 F 8 plasma reactive ion etching as described in detail in previous sections.…”

“…The devices are referred to as "hybrid Si evanescent lasers" (Fang et al, 2006). Single facet output power from the Si waveguide can exceed 10 mW at room temperature, making these devices ready for practical use (Sun et al, 2009 Si substrate p-side metal proton implanted proton implanted Fig. 12.…”

Hybrid III–V/Si Distributed-Feedback Laser Based on Adhesive Bonding

“…Among several types of hybrid III-V/Si lasers, evanescently coupled devices show a great potential for industrial-scale fabrication. Most of the previously demonstrated, evanescently coupled hybrid lasers, including Fabry-Perot [1]- [3], distributed Bragg reflector (DBR) [4], and distributed-feedback (DFB) lasers [5] were based on a molecular (direct) wafer bonding technique which Manuscript received on August 23, 2012. This work was supported by a grant from Intel Corporation and partly supported by the EU-commission through the ERC-grant ULPPIC.…”