Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III-V semiconductor compounds and/or electro-optic materials such as lithium niobate. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only approximately 20 MHz (refs 10, 11), although it has been predicted theoretically that a approximately 1-GHz modulation frequency might be achievable in some device structures. Here we describe an approach based on a metal-oxide-semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.

An electrically pumped light source on silicon is a key element needed for photonic integrated circuits on silicon. Here we report an electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding. This laser runs continuous-wave (c.w.) with a threshold of 65 mA, a maximum output power of 1.8 mW with a differential quantum efficiency of 12.7 % and a maximum operating temperature of 40 degrees C. This approach allows for 100's of lasers to be fabricated in one bonding step, making it suitable for high volume, low-cost, integration. By varying the silicon waveguide dimensions and the composition of the III-V layer, this architecture can be extended to fabricate other active devices on silicon such as optical amplifiers, modulators and photo-detectors.

No abstract

The possibility of light generation and/or amplification in silicon has attracted a great deal of attention for silicon-based optoelectronic applications owing to the potential for forming inexpensive, monolithic integrated optical components. Because of its indirect bandgap, bulk silicon shows very inefficient band-to-band radiative electron-hole recombination. Light emission in silicon has thus focused on the use of silicon engineered materials such as nanocrystals, Si/SiO2 superlattices, erbium-doped silicon-rich oxides, surface-textured bulk silicon and Si/SiGe quantum cascade structures. Stimulated Raman scattering (SRS) has recently been demonstrated as a mechanism to generate optical gain in planar silicon waveguide structures. In fact, net optical gain in the range 2-11 dB due to SRS has been reported in centimetre-sized silicon waveguides using pulsed pumping. Recently, a lasing experiment involving silicon as the gain medium by way of SRS was reported, where the ring laser cavity was formed by an 8-m-long optical fibre. Here we report the experimental demonstration of Raman lasing in a compact, all-silicon, waveguide cavity on a single silicon chip. This demonstration represents an important step towards producing practical continuous-wave optical amplifiers and lasers that could be integrated with other optoelectronic components onto CMOS-compatible silicon chips.

In this paper we elaborate on our work in the field of mid-infrared photonic integrated circuits for spectroscopic sensing applications. We discuss the use of silicon-based photonic integrated circuits for this purpose and detail how a variety of optical functions in the mid-infrared besides passive waveguiding and filtering can be realized, either relying on nonlinear optics or on the integration of other materials such as GaSb-based compound semiconductors, GeSn epitaxy and PbS colloidal nanoparticles.

Sceloporus aeneus exhibits reproductive bimodality. That is, one taxon (Sceloporus aeneus bicanthalis) is viviparous whereas the other (Sceloporus aeneus aeneus) is oviparous. Morphological differences in luteal and oviductal structure were examined. Oviparous and viviparous females have distinct corpora lutea that form immediately after ovulation and remain active until just prior to oviposition or parturition. Luteal activity is correlated positively with follicular atresia. The oviduct of both subspecies is divided into three distinct morphological regions: an anterior infundibulum, a median uterus, and a posterior vagina. The infundibulum and vagina of females exhibiting either parity type are similar, whereas distinct differences in utering morphology are apparent. Primarily, these differences include the loss of uterine glands and a reduction in epithelial cell height in the viviparous form. Moreover, viviparous females possess a simple but well-developed chorioallantoic placenta and a simple choriovitelline placenta. Chorioallantoic placentation is associated with a significant increase in uterine vascularity, indicating a role in gas and/or water exchange. The evolution of viviparity and placentation are discussed in relation to these observations.

CD4+CD25+ regulatory T cells (Treg cells) prevent T cell-mediated autoimmune diseases in rodents. To develop a functional Treg assay for human blood cells, we used FACS- or bead-sorted CD4+CD25+ T cells from healthy donors to inhibit anti-CD3/CD28 activation of CD4+CD25- indicator T cells. The data clearly demonstrated classical Treg suppression of CD4+CD25- indicator cells by both CD4+CD25(+high) and CD4+CD25(+low) T cells obtained by FACS or magnetic bead sorting. Suppressive activity was found in either CD45RO- (naive) or CD45RO+ (memory) subpopulations, was independent of the TCR signal strength, required cell-cell contact, and was reversible by interleukin-2 (IL-2). Of general interest is that a wider sampling of 27 healthy donors revealed an age- but not gender-dependent loss of suppressive activity in the CD4+CD25+ population. The presence or absence of suppressive activity in CD4+CD25+ T cells from a given donor could be demonstrated consistently over time, and lack of suppression was not due to method of sorting, strength of signal, or sensitivity of indicator cells. Phenotypic markers did not differ on CD4+CD25+ T cells tested ex vivo from suppressive vs. nonsuppressive donors, although, upon activation in vitro, suppressive CD4+CD25+ T cells had significantly higher expression of both CTLA-4 and GITR than CD4+CD25- T cells from the same donors. Moreover, antibody neutralization of CTLA-4, GITR, IL-10, or IL-17 completely reversed Treg-induced suppression. Our results are highly consistent with those reported for murine Treg cells and are the first to demonstrate that suppressive activity of human CD4+CD25+ T cells declines with age.

There have been significant advances in the field of echocardiography with the introduction of a number of new techniques into standard clinical practice. Consequently, a 'standard' echocardiographic examination has evolved to become a more detailed and time-consuming examination that requires a high level of expertise. This Guideline produced by the British Society of Echocardiography (BSE) Education Committee aims to provide a minimum dataset that should be obtained in a comprehensive standard echocardiogram. In addition, the layout proposes a recommended sequence in which to acquire the images. If abnormal pathology is detected, additional views and measurements should be obtained with reference to other BSE protocols when appropriate. Adherence to these recommendations will promote an increased quality of echocardiography and facilitate accurate comparison of studies performed either by different operators or at different departments.