A continuous-wave Raman silicon laser

Rong, Haisheng; Jones, Richard E.; Liu, Ansheng; Cohen, Oded; Hak, Dani; Fang, Alexander W.; Paniccia, Mario

doi:10.1038/nature03346

Cited by 1,122 publications

(565 citation statements)

References 22 publications

(43 reference statements)

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“…Unlike the group-III/V materials, the indirect band gap of silicon prohibits effi cient radiative recombination of carriers. A major milestone in the development of silicon photonics was reached with the demonstration of effi cient silicon Raman amplifi ers [17,18] and a room-temperature continuous-wave (CW) Raman laser [19] that can be fully integrated with CMOS circuits. Raman scattering in silicon is much stronger than in silicon dioxide because of the well-defi ned crystal lattice of silicon.…”

Section: Silicon Integrated Lasersmentioning

confidence: 99%

Device engineering for silicon photonics

Chen

Tsang

2011

NPG Asia Mater

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A fter an impressive initial spurt of progress in device engineering during the early 2000s when the optical communications industry saw unprecedented levels of investment, silicon photonics continues to develop at an amazing pace. Many novel applications and devices are emerging. Silicon photonics has the potential to become a major platform for optoelectronic integrated circuits (OEICs) and to be used in high-speed optical interconnects for chip-level data communications because of the extremely large bandwidth and high speed off ered by optical communications. Many challenges have been addressed through the introduction of innovative ideas, paving the way for the practical deployment of silicon-based optoelectronic devices and integrated photonic circuits in computing and telecommunication systems [1]. Th e commercialization of silicon photonics, originally driven by applications in telecommunications, is now also driven by the needs of the computing industry for highspeed, energy-effi cient optical cable technology, such as the Light Peak Technology under development by Intel (USA). Th e California-based company Luxtera (USA) has also commercialized a series of siliconphotonic transceiver systems.Silicon off ers many advantages over alternative material systems (e.g. InP, GaAs, LiNbO 3 ) for OEIC applications. One major reason for the wide interest that silicon photonics is attracting is the cost advantage that silicon photonics can potentially off er through its compatibility with the complementary metal-oxide-semiconductor (CMOS) fabrication processes used in the microelectronics industry. Th e huge investments that have been made in CMOS microelectronics fabrication technologies has resulted in processes that off er much higher yield than is possible using alternative materials for photonics, thus making feasible large-scale integration and the production of silicon-photonic devices that are monolithically integrated with not only optical components but also electronic circuits in the same platform at ultrahigh density. Another reason for the attractiveness of silicon photonics is the high refractive index contrast between the silicon core (refractive index, 3.48) and silicon dioxide cladding (refractive index, 1.45) in silicon-on-insulator (SOI) devices, which ensures the submicrometer confi nement of light and allows tight bending in optical waveguides. Th e high-density integration of photonic circuits on SOI platforms is thus feasible. Th e low cost of high-quality SOI wafers is another advantage of silicon photonics. All kinds of low-cost devices enabled by silicon photonics are therefore predicted, and these may also enjoy the other benefi ts of monolithic integration: smaller size, increased power effi ciency and improved reliability. Figure 1 shows an example of a high-density integrated photonics devices fabricated on a 6-inch SOI wafer using CMOS-compatible technology.In this article, we review some of the exciting progress that has been made in silicon photonics with the aim of providing a broa...

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Section: Silicon Integrated Lasersmentioning

confidence: 99%

Device engineering for silicon photonics

Chen

Tsang

2011

NPG Asia Mater

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“…This design rule usually works well especially for low index-contrast (∆) optical waveguides (e.g., SiO 2 -on-Si buried optical waveguides). However, it becomes very different for small optical waveguides with very high ∆, e.g., submicron SOI waveguides, which have been used widely for ultra-compact CMOS-compatible PICs [45][46][47][48][49][50][51][52][53][54][55][56]. For high-∆ optical waveguides, mode conversion between the eigenmodes may occur in an adiabatic tapered structure due to the mode hybridization at some special waveguide widths [57][58][59][60][61][62].…”

Section: Tapered Optical Waveguidesmentioning

confidence: 99%

Silicon Multimode Photonic Integrated Devices for on-Chip Mode-Division-Multiplexed Optical Interconnects

Dai¹,

Jian²,

He³

2013

PIER

110

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Abstract-Multimode spatial-division multiplexing (SDM) technology has attracted much attention for its potential to enhance the capacity of an optical-interconnect link with a single wavelength carrier. For a mode-multiplexed optical-interconnect link, the functional elements are quite different from the conventional ones as multiple modes are involved. In this paper we give a review and discussion on multimode photonic integrated devices for mode-multiplexed opticalinterconnects. Light propagation and mode conversion in tapered waveguides as well as bent waveguides are discussed first. Recent progress on mode converter-(de)multiplexers is then reviewed. The demands of some functional devices used for mode-multiplexed opticalinterconnects are also discussed. In particular, the fabrication tolerance is analyzed in detail for our hybrid demultiplexer, which enables mode-/polarization-division-(de)multiplexing simultaneously.

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“…In recent years, miniaturization of Raman silicon laser has been successfully achieved with the assistance of reverse-biased p-i-n diode at centimeter size or photonics-crystal with high-quality-factor nanocavity at micrometer size. [7][8][9] However, for applications such as high-resolution medical imagings or on-chip optical communications, 'ultimate' nanolasers with scalable, thresholdless, …”

mentioning

confidence: 99%

“…In the superlattice, atomic-thick gain medium ZnO layers are uniformly localized in the interior of the conducting medium, and are localized perpendicular to the oscillate direction of the electron-density. Therefore the polarization tensor perpendicular to the interface is rapidly, periodically changed at a resonance frequency of 7 surface plasmon. The Raman vibration modes perpendicular to the interface will be selectively enhanced according to periodically changing polarization tensor [35] , and Raman vibration modes parallel to the interface will be suppressed since there are almost no components of the electron-density oscillation parallel to the interface.…”

mentioning

confidence: 99%

A Thresholdless Tunable Raman Nanolaser using a ZnO–Graphene Superlattice

Zhu

Tian

et al. 2016

Advanced Materials

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Nanolasers based on surface plasmon opens up new platform for advanced nanophotonics technologies. [1][2][3][4][5][6] As Raman scattering process convert pump laser into new frequencies, so development of Raman nanolaser may allows for tunable nanolasers and boost the development of innovative nanophotonics technology. The Raman conversion for conventional Raman laser is intrinsically challenging as high intensities of the pump laser are required to drive the nonlinear effect. In recent years, miniaturization of Raman silicon laser has been successfully achieved with the assistance of reverse-biased p-i-n diode at centimeter size or photonics-crystal with high-quality-factor nanocavity at micrometer size. [7][8][9] However, for applications such as high-resolution medical imagings or on-chip optical communications, 'ultimate' nanolasers with scalable, thresholdless,

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A continuous-wave Raman silicon laser

Cited by 1,122 publications

References 22 publications

Device engineering for silicon photonics

Device engineering for silicon photonics

Silicon Multimode Photonic Integrated Devices for on-Chip Mode-Division-Multiplexed Optical Interconnects

A Thresholdless Tunable Raman Nanolaser using a ZnO–Graphene Superlattice

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