Silicon Heterojunction Solar Cell: A New Buffer Layer Concept With Low-Temperature Epitaxial Silicon

Centurioni, E.; Iencinella, D.; Rizzoli, R.; Zignani, F.

doi:10.1109/ted.2004.836801

Cited by 25 publications

(13 citation statements)

References 12 publications

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“…Insertion of a thick intrinsic buffer layer is detrimental to the V oc . Such a result is expected taking into account the same findings reported by Centurioni et al, 29 but is unexpected taking into account the very different findings reported by Tanaka et al…”

Section: Effect Of Silicon Film Thicknesssupporting

confidence: 78%

“…1 Several groups have already reported encouraging results with emitters deposited by plasma-enhanced chemical vapor deposition. 2,3 The hot-wire chemical vapor deposition (HWCVD) technique has attracted much less attention to fabricate Si HJ solar cells. [4][5][6] However, some technological advantages could be argued in terms of deposition rate, gas decomposition, and no ion bombardment.…”

Section: Introductionmentioning

confidence: 99%

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Simulation and fabrication of heterojunction silicon solar cells from numerical computer and hot‐wire CVD

Lien

Wuu

2009

Progress in Photovoltaics

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In this paper, we will present a Pc1D numerical simulation for heterojunction (HJ) silicon solar cells, and discuss their possibilities and limitations. By means of modeling and numerical computer simulation, the influence of emitter-layer/intrinsic-layer/crystalline-Si heterostructures with different thickness and crystallinity on the solar cell performance is investigated and compared with hot wire chemical vapor deposition (

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Section: Effect Of Silicon Film Thicknesssupporting

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Simulation and fabrication of heterojunction silicon solar cells from numerical computer and hot‐wire CVD

Lien

Wuu

2009

Progress in Photovoltaics

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“…This is evaluated from the subgap optical absorption measured by Photothermal Deflection Spectroscopy in samples grown on glass substrates [21]. Nevertheless, the much thinner films on crystalline silicon that are used in these structures could differ significantly from those deposited on glass [25]. Fig.…”

Section: Resultsmentioning

confidence: 99%

Bifacial heterojunction silicon solar cells by hot-wire CVD with open-circuit voltages exceeding 600 mV

et al. 2006

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“…The buffer layer at the n-i interface presumably acts as a defect passivation layer and reduces interface recombination, as already reported for heterojunction solar cells. 34,35 The best high voltage/high current tradeoff was provided by the a-Si:H/lc-Si:H tandem cell constituted of a 650 nm thick lc-Si:H bottom cell with a 20 nm buffer layer and a 250 nm thick a-Si:H top cell (cell C in Table I), which promoted over 1.5 V and 10.0 mA/cm 2 with 11.0% conversion efficiency. Furthermore, this tandem cell had a total thickness below 1 lm, accentuating its low-cost production and potential high stability against light-induced degradation.…”

Section: Discussionmentioning

confidence: 99%

a-Si:H/µc-Si:H tandem junction based photocathodes with high open-circuit voltage for efficient hydrogen production

et al. 2014

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Thin film silicon tandem junction solar cells based on amorphous silicon (a-Si:H) and microcrystalline silicon (lc-Si:H) were developed with focus on high open-circuit voltages for the application as photocathodes in integrated photoelectrochemical cells for water electrolysis. By adjusting various parameters in the plasma enhanced chemical vapor deposition process of the individual lc-Si:H single junction solar cells, we showed that a-Si:H/lc-Si:H tandem junction solar cells exhibit open-circuit voltage over 1.5 V with solar energy conversion efficiency of 11% at a total silicon layer thickness below 1 lm. Our approach included thickness reduction, controlled SiH 4 profiling, and incorporation of intrinsic interface buffer layers. The applicability of the tandem devices as photocathodes was evaluated in a photoelectrochemical cell. The a-Si:H/lc-Si:H based photocathodes exhibit a photocurrent onset potential of 1.3 V versus RHE and a short-circuit photocurrent of 10.0 mA/cm 2 . The presented approach may provide an efficient and low-cost pathway to solar hydrogen production.

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Silicon Heterojunction Solar Cell: A New Buffer Layer Concept With Low-Temperature Epitaxial Silicon

Cited by 25 publications

References 12 publications

Simulation and fabrication of heterojunction silicon solar cells from numerical computer and hot‐wire CVD

Simulation and fabrication of heterojunction silicon solar cells from numerical computer and hot‐wire CVD

Bifacial heterojunction silicon solar cells by hot-wire CVD with open-circuit voltages exceeding 600 mV

a-Si:H/µc-Si:H tandem junction based photocathodes with high open-circuit voltage for efficient hydrogen production

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