Bifacial heterojunction silicon solar cells by hot-wire CVD with open-circuit voltages exceeding 600 mV

Voz, C.; Muñoz, D.; Fonrodona, M.; Martı́n, I.; Puigdollers, J.; Alcubilla, R.; Escarré, Jordi; Bertomeu, J.; Andreu, J.

doi:10.1016/j.tsf.2005.11.099

Cited by 22 publications

(9 citation statements)

References 18 publications

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“…thickness 300 mm with aluminum back-surface-field (Al-BSF), following a method described elsewhere. The inner structure of the studied solar cells was indium tin oxide (ITO)/(n)a-Si:H/(i)a-Si:H/(p)c-Si/Al, with all the films deposited by hot-wire chemical vapor deposition technique [11]. The thickness of the intrinsic passivation a-Si:H layer was 5 nm.…”

Section: Resultsmentioning

confidence: 99%

Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under illumination

Mora‐Seró

Luo

García-Belmonte

et al. 2008

Solar Energy Materials and Solar Cells

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Section: Resultsmentioning

confidence: 99%

Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under illumination

Mora‐Seró

Luo

García-Belmonte

et al. 2008

Solar Energy Materials and Solar Cells

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“…The low processing temperature (o200 1C) prevents the bulk property degradation of the substrate that is usually observed in high-temperature processes. Further, compared with the conventional diffused solar cells, HIT solar cells have a better temperature coefficient and a higher open-circuit voltage (V OC ) [2][3][4]. For these reasons, HIT solar cells have been extensively investigated.…”

Section: Introductionmentioning

confidence: 99%

Design optimization of bifacial HIT solar cells on p-type silicon substrates by simulation

Zhao

Zhou

et al. 2008

Solar Energy Materials and Solar Cells

115

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“…With regard to the back contact, the lattice constant for the case at hand is roughly 375 nm implying that the benefits of coupling light into planar resonant modes is essentially lost once the TCO thickness has reached $90 nm, a typical thickness of indium tin oxide layer in amorphouscrystalline silicon heterojunction solar cells. [28] Thus, the benefits of the PC back-reflector would not be fully realized if a TCO film were to be inserted between the wafer and the PC. An alternative approach to implementing the PC backreflector may be to structure the back contact itself in the form of a PC.…”

Section: Incorporating Pc Back-reflectors Into Si Pv Devicesmentioning

confidence: 99%

Silicon Photovoltaics Using Conducting Photonic Crystal Back‐Reflectors

et al. 2008

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Currently, research is being directed towards thinning conventional 200–300µm thick silicon photovoltaic cells by an order of magnitude or more. The benefits of reducing the cell thickness include decreased material costs, enhanced cell flexibility, and reduced effects of light‐induced degradation. However, one of the major challenges associated with reducing the active region to this extent is the corresponding reduction of light absorption. To mitigate this effect it has been proposed that the cell should incorporate enhanced light‐trapping strategies. One potential approach to enhance light trapping in thin photovoltaic cells is to structure the back‐reflector in the form of a photonic crystal (PC). It has recently been shown that two fundamental attributes of PC back‐reflectors optically coupled to thin semiconductor films contribute to enhanced absorption in the semiconductor: (i) the PC back‐reflector behaves as a perfect mirror, exhibiting complete reflection over stop‐gap frequencies; and (ii) the PC–semiconductor film interface couples incident light into resonant states that propagate along the plane of the film, thereby further enhancing the absorption. Although the ability of PC back‐reflectors to enhance absorption is encouraging, significant challenges arise when attempting to incorporate this light trapping technique in photovoltaic devices. Herein, we describe the underlying physical mechanisms that give rise to absorption enhancements in thin Si wafers featuring PC back‐reflectors, and describe hurdles that will have to be surmounted in order to reduce‐to‐practice a PC back‐reflector into an actual PV device.

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Bifacial heterojunction silicon solar cells by hot-wire CVD with open-circuit voltages exceeding 600 mV

Cited by 22 publications

References 18 publications

Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under illumination

Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under illumination

Design optimization of bifacial HIT solar cells on p-type silicon substrates by simulation

Silicon Photovoltaics Using Conducting Photonic Crystal Back‐Reflectors

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