Silicon carbide as a new MEMS technology

Sarro, P.M.

doi:10.1016/s0924-4247(99)00335-0

Cited by 385 publications

(206 citation statements)

References 21 publications

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“…This process was used for the three 3C-SiC films grown on (100) Si substrates 9 at 2.45, 3.21, 4 lm/h of growth rate measured at the wafer center. The FTIR measurements show that, due to the lack of wafer rotation during film growth, the sample thickness varied between 2.3 lm (center) and 2.5 lm (edge) across the 50-mm wafer diameter in a direction [110], parallel to the main flat (transverse to the flow direction), while the thickness varied between 3.3 lm (upstream) and 2.2 lm (downstream) along a direction [1][2][3][4][5][6][7][8][9][10] perpendicular to the main flat (flow direction).…”

Section: Methodsmentioning

confidence: 99%

“…1 However, the most important property of 3C-SiC is that it can be grown on large diameter Si substrates, offering the possibility for low-cost batch processing, which makes SiC more attractive for sensors and device applications. 2 Unfortunately, due to high residual stresses (which normally arise during the growth process), the use of SiC processed using Si-based sensor or device fabrication techniques has been somewhat limited. In thin films, the residual strain/stress field determines the final wafer bow that has important implications with regard to processing, epitaxial quality, and films properties.…”

Section: Introductionmentioning

confidence: 99%

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Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates

et al. 2012

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To understand the impact that the growth rate has on the residual stress of chemical vapor deposition-grown 3C-SiC heteroepitaxial films on Si substrates, growth experiments were performed. The film thickness was held constant at ;2.5 lm independent of the growth rate so as to allow for direct film comparison as a function of the growth rate. Stress analysis performed by profilometer curvature measurement, livqo-Raman shift analysis and micro-machined freestanding structures, show an apparent disagreement about the stress nature. This incongruity between the experimental data can be explained assuming a strong stress field located in the substrate related to defects generated in the silicon during the growth process.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates

et al. 2012

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“…In particular, a-SiC: H has inspired technological interest due to the possibility of tailoring its physical properties to suit different applications by varying the relative composition of constituent atoms. Their application may range from protective layer of solar cell both crystalline and thin films to microelectronic nanomechanical devices [1] and from passivation layer [2] to lithium ion batteries [3]. Silicon carbide is also used as substrate in catalyst free growth of graphene by many researchers [4].…”

Section: Introductionmentioning

confidence: 99%

Phosphorous Doped Hydrogenated Amorphous Silicon Carbide Films Deposited by Filtered Cathodic Vacuum Arc Technique

Tripathi

Panwar

Kesarwani

et al. 2014

Physics of Semiconductor Devices

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Abstract-In the present work, we report the growth and characterization of phosphorous doped hydrogenated amorphous silicon carbide (a-SiC: H) films deposited by filtered cathodic vacuum arc technique using solid silicon target as cathode in presence of acetylene gas. The films have been characterized by x-ray diffraction, dark conductivity, activation energy, optical band gap, scanning electron microscopy, energy dispersive x-ray analysis and residual stress. The effect of arc current on the properties of P doped a-SiC: H films have been studied Index Terms-P doped a-SiC: H, Scanning electron microscopy, X-ray diffraction, Dark conductivity, Activation energy, Optical band gap, Residual stress.

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“…Since the 1990's, silicon carbide (SiC) has gained considerable research and development attention, as an attractive alternative micromachining material to silicon, for realising various microelectromechanical systems (MEMS) sensors and actuators suitable for operation in harsh environments [1][2][3][4][5][6][7]. Thanks to its highly desired material properties such as high physicochemical stability, high hardness, good thermal conductivity, high-temperature operability, wear resistance and chemical inertness.…”

Section: Introductionmentioning

confidence: 99%

“…In this light, the material properties, in the form of plasma enhanced chemical vapour deposited (PECVD) SiC, when combined with CMOS-compatible low thermal budget post-processing shall provide an attractive surface micromachining technology platform for merging SiC MEMS with integrated circuits (ICs). By using high resistivity PECVD SiC thin films, as dielectric and structural material, and aluminium (Al) as electrical conductor, MEMS can be post-IC processed on top of the IC [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

PECVD silicon carbide surface micromachining technology and selected MEMS applications

Rajaraman

Pakula

Yang

et al. 2010

Int J Adv Eng Sci Appl Math

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Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with integrated circuits. In this paper we present a generic surface micromachining technology developed using a stressoptimised PECVD SiC as the structural and encapsulation material for MEMS. An overview of selected MEMS applications realised, at DIMES Technology Center (DTC) of TU Delft, using the PECVD SiC surface micromachining technology is provided. Presented MEMS examples include-a pressure sensor, wafer-level thin-film packaging, RF switch and accelerometers. Potential applications for the presented technology include automotive, industrial and medical systems, where devices are often subjected to harsh environments.Keywords Silicon carbide (SiC) Á Microelectromechanical systems (MEMS) Á Micromachining Á Pressure sensor Á Accelerometer Á RF switch Á Wafer-level packaging (WLP) Á Thin film encapsulation (TFE)

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Silicon carbide as a new MEMS technology

Cited by 385 publications

References 21 publications

Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates

Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates

Phosphorous Doped Hydrogenated Amorphous Silicon Carbide Films Deposited by Filtered Cathodic Vacuum Arc Technique

PECVD silicon carbide surface micromachining technology and selected MEMS applications

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