Filtered cathodic vacuum arc technique has been used to deposit amorphous carbon (a-C) films of varying thicknesses from 10 nm to 38 nm on catalytic nickel thin film grown on SiO2/Si substrates. Subsequently, a-C films were annealed in vacuum in the temperature range from 650 to 850 °C. Micro-Raman spectroscopic study in combination with optical microscopy and scanning electron microscopy has revealed few layer graphene formations with optical transmittance in the range 85%–88% with a-C films deposited with 10 nm and 18 nm thicknesses. The optimum temperature of annealing was observed to be 750 °C.
This paper reports the growth and properties of phosphorous doped hydrogenated amorphous silicon carbide (P doped a-SiC:H) thin films deposited at room temperature by a filtered cathodic vacuum arc (FCVA) technique using a phosphorous doped solid silicon target as a cathode in the presence of acetylene gas. These films have been characterized by X-ray diffraction (XRD), scanning electron microscopy, energy dispersive X-ray analysis, dark conductivity, activation energy, optical band gap, secondary ion mass spectroscopy, Raman spectroscopy, current-voltage, capacitance-voltage and photoconductive measurements. XRD results exhibit predominantly an amorphous phase for the films.The effect of the arc current on the properties of P doped a-SiC:H films have been studied. A P doped a-SiC:H/c-Si heterojunction diode was fabricated which showed a diode ideality factor between 1.5 to 1.7 and the density of states were 9.6 Â 10 16 to 4.8 Â 10 17 cm À3 eV
À1. The photo response behaviors of the P doped a-SiC:H films have been tested by measuring the change in the electrical resistance on light illumination with the fast response and recovery time as 7.8 to 9.5 and 6.2 to 12.8 s, respectively. The P doped a-SiC:H film deposited at a 30 A arc current has shown a photo response of $1.6% at an illumination intensity of $100 mW cm
À2.
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