Investigations on phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique for photo detecting applications

Abstract

This paper reports the growth and properties of phosphorous doped hydrogenated amorphous silicon carbide (P doped a-SiC:H) thin films deposited at room temperature by a filtered cathodic vacuum arc (FCVA) technique using a phosphorous doped solid silicon target as a cathode in the presence of acetylene gas. These films have been characterized by X-ray diffraction (XRD), scanning electron microscopy, energy dispersive X-ray analysis, dark conductivity, activation energy, optical band gap, secondary ion mass spectroscopy, Raman spectroscopy, current-voltage, capacitance-voltage and photoconductive measurements. XRD results exhibit predominantly an amorphous phase for the films.The effect of the arc current on the properties of P doped a-SiC:H films have been studied. A P doped a-SiC:H/c-Si heterojunction diode was fabricated which showed a diode ideality factor between 1.5 to 1.7 and the density of states were 9.6 Â 10 16 to 4.8 Â 10 17 cm À3 eV À1. The photo response behaviors of the P doped a-SiC:H films have been tested by measuring the change in the electrical resistance on light illumination with the fast response and recovery time as 7.8 to 9.5 and 6.2 to 12.8 s, respectively. The P doped a-SiC:H film deposited at a 30 A arc current has shown a photo response of $1.6% at an illumination intensity of $100 mW cm À2.

The synthesis of a Cu0.8Zn0.2Sb2–polyacrylamide nanocomposite by frontal polymerization for moisture and photodetection performance

“…[21][22][23][24][25] Nowadays the photodetection properties are also thoroughly investigated together with the humidity sensing behaviour. [26][27][28][29] Some of the nanomaterials show the extraordinary behaviour of responding to both humidity as well as acting as a photodetector. In recent years to minimize the wastage of energy and improve the energy-saving practices, photoconduction has been studied for different nanomaterials.…”

“…In recent years to minimize the wastage of energy and improve the energy-saving practices, photoconduction has been studied for different nanomaterials. 26,28,30 The results of a literature survey based on other metal oxides used as humidity sensors is shown in Table 1: [31][32][33][34][35][36][37][38] Here, in the method described in the present manuscript, a ternary metal-doped AAm composite was used for photoconduction behaviour and as a humidity sensor for the measurement of moisture. Previous investigations were focussed only on single metal-doped complexes but here a stable ternary system for humidity sensing is reported for the first time.…”

Excellent Response and Recovery Time of Photo-Detectors Based on Nc-Si:H Films Grown by Using Hot Wire Method

“…23 Knight et al proposed a distinguished concept of using an active antenna for photo-detection well below the band edge of the semiconductor material. Using filtered cathodic vacuum arc (FCVA) 24 technique Tripathi et al developed phosphorous doped hydrogenated amorphous silicon carbide (P doped a-SiC:H) thin film photo detectors at room temperature having fast response and recovery time. Later, 25 using the same technique Kesarwani et al synthesized phosphorus doped amorphous/nanocrystalline silicon thin film photo detectors in the presence of hydrogen gas having good fast response and recovery time.…”

Study of Electrical Conductivity and Microcosmic Structure of Tetrahedral Amorphous Carbon Films Doped by Boron

“…They also doped hydrogenated amorphous silicon carbide (P doped a-Si C:H) thin films deposited at room temperature by a FCVA technique using a phosphorus doped solid silicon target as a cathode in the presence of acetylene gas. These films have been characterized by X-ray diffraction (XRD), scanning electron microscopy, energy dispersive X-ray analysis, dark conductivity, activation energy, optical band gap, secondary ion mass spectroscopy, Raman spectroscopy, current-voltage, capacitancevoltage, and photoconductive measurements [20].…”