Phosphorous Doped Hydrogenated Amorphous Silicon Carbide Films Deposited by Filtered Cathodic Vacuum Arc Technique

Abstract

Abstract-In the present work, we report the growth and characterization of phosphorous doped hydrogenated amorphous silicon carbide (a-SiC: H) films deposited by filtered cathodic vacuum arc technique using solid silicon target as cathode in presence of acetylene gas. The films have been characterized by x-ray diffraction, dark conductivity, activation energy, optical band gap, scanning electron microscopy, energy dispersive x-ray analysis and residual stress. The effect of arc current on the properties of P doped a-SiC: H films have been studied Index Terms-P doped a-SiC: H, Scanning electron microscopy, X-ray diffraction, Dark conductivity, Activation energy, Optical band gap, Residual stress.