Sensitivity Enhancement of Si Nanowire Field Effect Transistor Biosensors Using Single Trap Phenomena

Li, Jing; Pud, Sergii; Petrychuk, M. V.; Offenhäusser, Andreas; Vitusevich, S. А.

doi:10.1021/nl5010724

Cited by 57 publications

(60 citation statements)

References 40 publications

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“…It should be noted that RTS noise can be used as a signal for biosensors. [27] The signal-to-noise ratio (SNR) in FET sensors is typically limited by well-established low-frequency noise models that show a scaling with the root mean square of the device area and the density of traps in the oxide. [44] As it was discussed above the stronger slope can be explained in frame of additional energy due to Coulomb interaction processes.…”

Section: Resultsmentioning

confidence: 99%

“…Moreover, this effect can be successfully used to enhance the sensitivity of a biosensor to the proton concentration and surface potential change in liquid-gated FETs. [27][28][29] In this respect, single trap phenomena can be used as a novel sensitive approach for studying local changes in surface potential and for monitoring the surface potential change in a wide application range. However, the single trap phenomenon is usually a purely statistical event, which is a result of random distribution of the traps in the gate dielectric and therefore its parameters vary from device to device.…”

Section: Fieldeffect Transistorsmentioning

confidence: 99%

“…Therefore, the RTS effect is promising from the point of view of spin nanoelectronics and quantum information processing. Moreover, this effect can be successfully used to enhance the sensitivity of a biosensor to the proton concentration and surface potential change in liquid‐gated FETs . In this respect, single trap phenomena can be used as a novel sensitive approach for studying local changes in surface potential and for monitoring the surface potential change in a wide application range.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel

Zadorozhnyi

Pud

et al. 2017

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In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field-effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley-Read-Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment. The results represent potential for utilizing single trap phenomena in a number of advanced devices.

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Section: Resultsmentioning

confidence: 99%

Section: Fieldeffect Transistorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel

Zadorozhnyi

Pud

et al. 2017

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“…The RTS time constants change with variation of the pH value in a liquid-gated transistor because capture and emission times are functions of the carrier concentration as well as the drain current. 63 It should be emphasized that the classical solution (32) gives a different ratio from that obtained in the QM approach. Such behavior can be explained by the fact that in the QM case electrons should also reach the interface before being captured in the trap.…”

Section: Random Telegraph Signal Behavior Of Drain Currentmentioning

confidence: 99%

Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

Pud

Gasparyan

Petrychuk

et al. 2014

Journal of Applied Physics

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Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their transport and dynamic properties are investigated experimentally and theoretically. Random telegraph signal (RTS) fluctuations were registered in the nanolength channel FETs and used for the experimental and theoretical analysis of transport properties. The drain current and the carrier interaction processes with a single trap are analyzed using a quantum-mechanical evaluation of carrier distribution in the channel and also a classical evaluation. Both approaches are applied to treat the experimental data and to define an appropriate solution for describing the drain current behavior influenced by single trap resulting in RTS fluctuations in the Si NW FETs. It is shown that quantization and tunneling effects explain the behavior of the electron capture time on the single trap. Based on the experimental data, parameters of the single trap were determined. The trap is located at a distance of about 2 nm from the interface Si/SiO2 and has a repulsive character. The theory of dynamic processes in liquid-gated Si NW FET put forward here is in good agreement with experimental observations of transport in the structures and highlights the importance of quantization in carrier distribution for analyzing dynamic processes in the nanostructures.

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“…A beneficial characteristic of a single trap in the dielectric of liquid-gated FETs is that the RTS behavior can be used as a basic principle for novel, highly sensitive biosensors. 7 As far as nanoelectronic device dimensions strive to shrink down, RTS becomes more and more important in determining the performance and reliability. Individual charge traps can significantly alter the channel current of nm-sized FETs.…”

Section: Introductionmentioning

confidence: 99%

Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current

Gasparyan

Zadorozhnyi

2015

Journal of Applied Physics

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Articles you may be interested inThe basic reason for enhanced electron capture time, s c , of the oxide single trap dependence on drain current in the linear operation regime of p þ -p-p þ silicon field effect transistors (FETs) was established, using a quantum-mechanical approach. A strong increase of s c slope dependence on channel current is explained using quantization and tunneling concepts in terms of strong field dependence of the oxide layer single trap effective cross-section, which can be described by an amplification factor. Physical interpretation of this parameter deals with the amplification of the electron cross-section determined by both decreasing the critical field influence as a result of the minority carrier depletion and the potential barrier growth for electron capture. For the NW channel of n þ -p-n þ FETs, the experimentally observed slope of s c equals (À1). On the contrary, for the case of p þ -p-p þ Si FETs in the accumulation regime, the experimentally observed slope of s c equals (À2.8). It can be achieved when the amplification factor is about 12. Extraordinary high capture time slope values versus current are explained by the effective capture cross-section growth with decreasing electron concentration close to the nanowire-oxide interface. V C 2015 AIP Publishing LLC.

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Sensitivity Enhancement of Si Nanowire Field Effect Transistor Biosensors Using Single Trap Phenomena

Cited by 57 publications

References 40 publications

Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel

Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel

Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current

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