Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current

Abstract

Articles you may be interested inThe basic reason for enhanced electron capture time, s c , of the oxide single trap dependence on drain current in the linear operation regime of p þ -p-p þ silicon field effect transistors (FETs) was established, using a quantum-mechanical approach. A strong increase of s c slope dependence on channel current is explained using quantization and tunneling concepts in terms of strong field dependence of the oxide layer single trap effective cross-section, which can be described by an amplification factor. Physical interpretation of this parameter deals with the amplification of the electron cross-section determined by both decreasing the critical field influence as a result of the minority carrier depletion and the potential barrier growth for electron capture. For the NW channel of n þ -p-n þ FETs, the experimentally observed slope of s c equals (À1). On the contrary, for the case of p þ -p-p þ Si FETs in the accumulation regime, the experimentally observed slope of s c equals (À2.8). It can be achieved when the amplification factor is about 12. Extraordinary high capture time slope values versus current are explained by the effective capture cross-section growth with decreasing electron concentration close to the nanowire-oxide interface. V C 2015 AIP Publishing LLC.

Temperature‐Dependent Noise and Transport in Silicon Two‐Layer Nanowire FETs

“…However, it was recently demonstrated that the low‐frequency noise in nanotransistor‐based biosensors can be successfully used as a useful signal . In particular, it has been shown that biosensors based on liquid‐gated nanowire FETs can demonstrate the random‐telegraph noise caused by the single trap phenomena . In this specific case, improved sensitivity to the analyte can be obtained by considering trapping‐detrapping noise as a useful signal .…”

“…In particular, it has been shown that biosensors based on liquid‐gated nanowire FETs can demonstrate the random‐telegraph noise caused by the single trap phenomena . In this specific case, improved sensitivity to the analyte can be obtained by considering trapping‐detrapping noise as a useful signal . In order to have a better control over the single trap phenomena, we designed and fabricated silicon two‐layer (TL) nanowires FETs.…”

Single Electron Dynamics in Liquid-Gated Two-Layer Silicon Nanowire Structures: Towards Biosensing with Enhanced Sensitivity

“…According to conventional Shockley-Reed-Hall (SRH) theory it is linear because of the linear capture rate dependence on the carrier's concentration. However, experimentally it has been shown that the capture time characteristic behaves like the power function of drain current [1][2][3][4]:…”

Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties

“…Carriers concentrated near the FOX layer will influence and increase the probability of tunneling and the adsorption-desorption processes of the ionized particles will take place more intensively on the Si/SiO 2 interface. On the other hand, high values of the electron capture time slope (À2.8) in p-Si NW and its strong dependence on drain current 32 can also influence the intensity of adsorption-desorption processes. These factors reflect physical processes in the structure.…”

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