Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

Abstract

Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their transport and dynamic properties are investigated experimentally and theoretically. Random telegraph signal (RTS) fluctuations were registered in the nanolength channel FETs and used for the experimental and theoretical analysis of transport properties. The drain current and the carrier interaction processes with a single trap are analyzed using a quantum-mechanical evaluation of carrier distribution in the channel and also a classical evaluation. Both approaches are applied to treat the experimental data and to define an appropriate solution for describing the drain current behavior influenced by single trap resulting in RTS fluctuations in the Si NW FETs. It is shown that quantization and tunneling effects explain the behavior of the electron capture time on the single trap. Based on the experimental data, parameters of the single trap were determined. The trap is located at a distance of about 2 nm from the interface Si/SiO2 and has a repulsive character. The theory of dynamic processes in liquid-gated Si NW FET put forward here is in good agreement with experimental observations of transport in the structures and highlights the importance of quantization in carrier distribution for analyzing dynamic processes in the nanostructures.

Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current

“…2. Distribution of the carrier profiles, calculated using a quantum approach, 13 is plotted in Fig. 3.…”

“…They demonstrate that the slope of the electron capture time dependence on gate voltage is equal to (À1), which fully corresponds to the measured data. 13 Theoretical curves (Fig. 4) were calculated using a quantum approach for capture time.…”

“…13 In the present paper, the main concept of carriers' quantization and tunneling 13 was used in order to investigate and describe the basic reasons for the enhanced dependence of electron capture time on drain current in the linear operation regime of accumulation p þ -p-p þ Si liquidgated NW FETs in contrast to n þ -p-n þ structures.…”

Detection of Molecular Charge Dynamics through Current Noise in A GaAs-based Nanowire FET

“…These materials are very sensitive to surface charge because of high surface-to-bulk ratio. [4][5][6] Selective biochemical sensing has been successfully demonstrated using CNTs [7][8][9] and Si nanowires [10][11][12] . In this paper, we investigate a GaAs-based nanowire field-effect transistor (FET) for detection of the static and dynamic charge state of the molecule.…”

Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties

“…The phenomenon of the low-frequency (LF) fluctuation of electric current in semiconductors and semiconductor devices is the subject of investigations by many researchers and engineers. [26][27][28][29][30][31] Studies have shown that the behavior and magnitude of LF noise in devices based on nanosize silicon structures differs essentially from the noise in devices based on crystalline silicon.…”