Sealed-Interface Local Oxidation Technology

Hui, J.; Chiu, T.-Y.; Wong, Simon; Oldham, W.G.

doi:10.1109/jssc.1982.1051714

Cited by 4 publications

(1 citation statement)

References 8 publications

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“…Various parameters including the active area, oxidation recipe, and cell structure affect later oxide growth. 7 Note that the lateral oxidation could result not only in oxide encroachment in the direction of the channel length, but also bring it about in the direction of the channel width as shown in Fig. 2a.…”

Section: Resultsmentioning

confidence: 99%

Suppression of Oxide Encroachment into Floating Gate by Shallow Trench Isolation Recess in an Electrically Erasable Programmable Read Only Memory Cell

Kim

Lee

2006

J. Electrochem. Soc.

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In this paper, we investigate the effects of the oxide recess in shallow trench isolation ͑STI͒ on the characteristics of electrically erasable programmable read only memory ͑EEPROM͒ cell with in situ-doped floating gate. It is found that the distribution of the program threshold voltage is improved with increasing of the oxide recess in STI. Transmission electron microscopy analysis shows that the oxide recess in STI results in the decrease of oxide thickness at the edge of STI and in the center of tunnel oxide. Also, it is observed that erase cell current is increased about 11% with oxide recess of 200 Å and 21% with oxide recess of 400 Å, respectively. Endurance measurements in the EERPROM cell reveal that both electron and charge generation increase with increasing recess depth when the cycling time exceeds about 1 ϫ 10 3 .

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Section: Resultsmentioning

confidence: 99%

Suppression of Oxide Encroachment into Floating Gate by Shallow Trench Isolation Recess in an Electrically Erasable Programmable Read Only Memory Cell

Kim

Lee

2006

J. Electrochem. Soc.

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A metal-gate self-aligned MOSFET using nitride oxide

Schmidt

Raffel

Terry

et al. 1985

IEEE Trans. Electron Devices

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Re-Oxidation of Thermally Nitrided Silicon Dioxide Thin Films

Kiyotoshi

Tsunasima

Yamabe

1995

Jpn. J. Appl. Phys.

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Re-oxidation of thermally nitrided SiO2 thin films was studied. The SiO2 growth rate at re-oxidation is reduced until a certain time (the “oxidation delay time” or “ODT”) has passed. During the ODT, thermally nitrided SiO2 at the Si-SiO2 interface is re-oxidized. the ODT is the time required for complete oxidation of nitrided SiO2. Re-oxidation of thermally nitrided SiO2 thin films is limited not by diffusion of oxidizing species, but by oxidation of nitrided SiO2. The ODT is proportional to the nitrided SiO2 thickness. Nitrided SiO2 formation at the Si-SiO2 interface is mass-transfer controlled by nitriding species through nitrided SiO2 to Si substrate. As an application of thermal nitridation of SiO2, thermal nitridation of the local oxidation of silicon (LOCOS) pad oxide can shorten the bird's beak of LOCOS.

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Sealed-Interface Local Oxidation Technology

Cited by 4 publications

References 8 publications

Suppression of Oxide Encroachment into Floating Gate by Shallow Trench Isolation Recess in an Electrically Erasable Programmable Read Only Memory Cell

Suppression of Oxide Encroachment into Floating Gate by Shallow Trench Isolation Recess in an Electrically Erasable Programmable Read Only Memory Cell

A metal-gate self-aligned MOSFET using nitride oxide

Re-Oxidation of Thermally Nitrided Silicon Dioxide Thin Films

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