Abstract:In this paper, we investigate the effects of the oxide recess in shallow trench isolation ͑STI͒ on the characteristics of electrically erasable programmable read only memory ͑EEPROM͒ cell with in situ-doped floating gate. It is found that the distribution of the program threshold voltage is improved with increasing of the oxide recess in STI. Transmission electron microscopy analysis shows that the oxide recess in STI results in the decrease of oxide thickness at the edge of STI and in the center of tunnel oxi… Show more
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