We have previously described a model and a simulation approach to describe the adhesive interaction between a particle and a substrate. In this paper, we use the validated simulation to describe the adhesive interaction for alumina particles in contact with dielectric and metal films relevant to chemical mechanical polishing ͑CMP͒ and post-CMP cleaning during integrated circuit manufacture. The descriptions take into account variations in the geometry, surface morphology, and mechanical properties of the particles and substrates. The predictions demonstrate that these three parameters can cause the interaction forces between particles and substrates to vary considerably compared to those for perfect spheres and flat substrates.We have previously described a model and a simulation approach to predict the adhesive interaction between a particle and a substrate. 1-3 This prior work describes particle adhesion as a function of the surface chemistry, morphology, and geometry of the interacting surfaces. It also includes an experimental and theoretical investigation of the adhesion of alumina and polystyrene latex spheres to Cu and SiO 2 substrates in a variety of environments. 1-3 In this paper, we use the validated simulation to provide insight into particle-wafer interactions during chemical mechanical polishing ͑CMP͒ and post-CMP cleaning.
CMP and Post-CMP CleaningDuring CMP, a wafer surface is exposed to several different sources of particle contamination. These include (i) slurry particles, commonly micrometer-scale alumina and silica particles, (ii) pieces of the polishing pad used in CMP, primarily polyurethane, and (iii) particles of material removed from the surface during polishing, which may include Cu and copper oxides, W, SiO 2 , and barriers. Ideally all of these forms of contamination need to be minimized. This research focuses on the removal of slurry particle contamination.During CMP, slurry is introduced onto the surface of a wafer from the polishing pad, as seen in Fig. 1. The slurry is an aqueous solution containing abrasive particles. The slurry particles are commonly either alumina or silica, although other types of particles have been used in slurries, including ceria, titania, zirconia, and several different composite abrasives. Following CMP, slurry particles are not completely removed from the wafer's surface. Their adhesion may result from a combination of several phenomena. The first of these is van der Waals ͑vdW͒ forces. These forces are the only ones that are always significant during particle-wafer adhesion. They result in an attractive interaction between slurry particles and film surfaces. Next, chemical or hydrogen bonds can be formed between the slurry particles and the films. Several different effects during CMP can promote bonding of the slurry particles to the film surface. First, the chemical component of the slurry can alter the surface chemistry of the particle and the substrate, causing them to bond to each other. Also, during CMP there is a localized increase in the wafer's ...