Scanning electron mirror microscopy and scanning electron microscopy of integrated circuits

Cline, J.E.; Morris, James M.; Schwartz, S.

doi:10.1109/t-ed.1969.16759

Cited by 9 publications

(2 citation statements)

References 6 publications

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“…Fig. 3 illustrates an arrangement suggested or used by several authors (Paden andNixon 1968, Cline et al 1969 Ogilvie et al 1969, Cox 1971. It avoids the difficult beam separation of the devices presented in Figs.…”

Section: Semm Designsmentioning

confidence: 99%

“…Due to the benefit of the absence of irradiation effects (contamination and destruction of the specimen) and the high sensitivity to electric microfields, this method appeared to be very attractive to image semiconductor devices which are very sensitive to electron bombardment. Most of the SEMM applications made up to the present time have been contributions in this field (Paden and Nixon Ogilvie et al 1969, Cline et al 1969, Cox 1971, Luk'yanov et al 1974, Spivak et al 1978, Wilfing and Horl 1978. Circuit topography could be imaged and various defects such as microcracks, holes, scratches, etc.…”

Section: Applicationsmentioning

confidence: 99%

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Untitled

1981

Scanning

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Section: Semm Designsmentioning

confidence: 99%

Section: Applicationsmentioning

confidence: 99%

Untitled

1981

Scanning

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Untersuchung von pn‐Übergängen mit und ohne Oxidschicht mittels Elektronenspiegelmikroskopie in Schattenabbildung

Becherer

Gradewald

Kuhlmann

et al. 1973

Cryst Res and Technol

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Fiir die Abbildung der Proben setzt die Kontrastubersteuerung eine Grenze, die theoretisch und durch Aufnahmen demonstriert wird. Der Kontrast der pn-tfbergange mit Oxidschicht im Bild in Abhangigkeit von der Objektspannung wird mittels ~quipotentialfliichenmodell diskutiert. Der Kontrast von pn-Ubergangen ohne Oxidschicht im Bild in Abhangigkeit von der Querspannung wird mit Fotometerkurven und durch Rechnung demonstriert. Es wird die Aufnahme einer kreisformigen, positiven Aufladung gezeigt, deren Kontrast eine gute ubereinstimmung mit den Rechnungen von LENZ und KRIMYEL besitzt. The contrast distortion is the limit for the investigation of the samples. This effect is discussed theoretically and experimentally. The contrast of pn-junctions covered with oxide layers is demonstrated as a function of the bias voltage and by a model of the equipotential surfaces. The contrast of pn-junctions without oxide layers is demonstrated theoretically by a model of a voltage step and experimentally by curves of the photometer. The picture of a circular positive charge shows a good conformity with a theory from LENZ and KRIYMEL.

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