Phssenbildnng in Ni/Si-SchichtenNi-bedampfte amorphe Si-Schichten werden wiihrend des Temperna im Elektronendkroskop untersucht. Es wird gezeigt, da9 im Verlauf dea Diffueionsprozesses in Abhiingigkeit vom Ni-Anteil rn der Schicht acht Phaeen gebildet werden. Generell entstehen zuniichst metsllarme Verbindungen. Am den Ergebnissen wurde geschlossen, daB die Phasenumwandlungen kinetisch und nicht thermodynamisch bedingt sind.Thin films of Ni evaporated onto amorphous Si layers are studied in the electron microscope during annealing, It is shown that in the diffusion process eight phases are formed depending on the Ni content of the layer. Metalpoor compounds are formed first. From the results it was concluded that the phese transformetion is determined by the kinetics of the transformetion mechanism and not by the thermodynamic stability.
Only few work has done in investigating the energy distribution of exo-electrons.Recently Kriegseis and Scharmann (1) reported measurements on thermally stimulated exo-electrons from BaS04 powder.In a similar arrangement described there, we studied the energy of emitted After etching with diluted hydrofluoric acid the metals were oxidized and then 0 brought into the vacuum. The silicon single crystal slices were oxidized at 900 C in a stream of wet oxygen. The Si 0 N layers were created by a glow discharge at the surface of the monocrystalline silicon slices.The samples were excited for 10 min with 1 keV electrons and stimulated by heating up to 500 OC with a heating rate of 2 deg/s. For each sample a complete glow curve was taken at each bias voltage which could be varied between +5 V and -1 0 V. In this way changes of the run of the whole glow curve as a function of bias voltage could be observed. A typical set of glow curves is seen in Fig. 1. The resulting energy distribution of electrons can be deduced from Fig. 2.The glow curve of oxidized copper shows two maxima at 160 and 260 C, as published for example in (2). It becomes obvious that both maxima decrease equally with increasing retarding field and meet the zero line at -9.5 V whereby the ratio N1/N2 remains nearly constant. N and N are the bias voltage depending counting 1 2
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