Room‐Temperature InGaAs Nanowire Array Band‐Edge Lasers on Patterned Silicon‐on‐Insulator Platforms

Lee, Wook‐Jae; Chang, Ting-Yuan; Huffaker, Diana L.

doi:10.1002/pssr.201800489

Cited by 24 publications

(17 citation statements)

References 45 publications

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“…5c). The estimated spontaneous emission factor is~0.01, which is smaller than the values of ultrasmall nanolasers 32 due to the relatively large mode volume [33][34][35] . Third, the interference images are measured in the spontaneous emission, amplified spontaneous emission, and lasing regions in the super-BIC laser (Fig.…”

Section: Resultsmentioning

confidence: 66%

Ultralow-threshold laser using super-bound states in the continuum

et al. 2021

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Wavelength-scale lasers provide promising applications through low power consumption requiring for optical cavities with increased quality factors. Cavity radiative losses can be suppressed strongly in the regime of optical bound states in the continuum; however, a finite size of the resonator limits the performance of bound states in the continuum as cavity modes for active nanophotonic devices. Here, we employ the concept of a supercavity mode created by merging symmetry-protected and accidental bound states in the continuum in the momentum space, and realize an efficient laser based on a finite-size cavity with a small footprint. We trace the evolution of lasing properties before and after the merging point by varying the lattice spacing, and we reveal this laser demonstrates the significantly reduced threshold, substantially increased quality factor, and shrunken far-field images. Our results provide a route for nanolasers with reduced out-of-plane losses in finite-size active nanodevices and improved lasing characteristics.

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Section: Resultsmentioning

confidence: 66%

Ultralow-threshold laser using super-bound states in the continuum

et al. 2021

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“…The silicon nitride mask is removed around the nanowire array (noted as 'exposed Si' in Figure 4(b)), so that the exposed Si area can work as a diffusion barrier of adatoms during nanowire epitaxy and thus promote uniform growth of nanowires by limiting the diffusion area of adatoms on the surface. [40,41] This article is protected by copyright. All rights reserved.…”

Section: Integration Of Nanowire Arrays With Soi(001) Photonic Componentsmentioning

confidence: 99%

Orientation‐Controlled Selective‐Area Epitaxy of III–V Nanowires on (001) Silicon for Silicon Photonics

Chang

Zutter

Lee

et al. 2020

Adv Funct Materials

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Monolithic integration of III-V nanowires on silicon platforms has been regarded as a promising building block for many on-chip optoelectronic, nanophotonic, and electronic applications. Although great advances have been made from fundamental material engineering to realizing functional devices, one of the remaining challenges for on-chip applications is that the growth direction of nanowires on Si(001) substrates is difficult to control. Here, we propose and demonstrate catalystfree selective-area epitaxy of nanowires on ( 001)-oriented silicon-on-insulator (SOI) substrates with the nanowires aligned to desired directions. This is enabled by exposing {111} planes on (001) substrates using wet chemical etching, followed by growing nanowires on the exposed planes. We demonstrate the formation of nanowire array-based bottom-up photonic crystal cavities on SOI(001) and their coupling to silicon waveguides and grating couplers, which support the feasibility for onchip photonic applications. The proposed method of integrating position-and orientationcontrollable nanowires on Si(001) provides a new degree of freedom in combining functional and ultracompact III-V devices with mature silicon platforms.

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“…With the successful introduction of quantum confined structures such as quantum dots and quantum wells into NWs, the gain characteristics could be flexibly tuned and NW lasers exhibit superior device performance, like low threshold and high-temperature stability 10 , 11 , 17 – 19 . In recent years, the development of selective area epitaxy enables the demonstration of NW-array-based lasers with other photonic modes 6 , 20 , 21 . These achievements greatly promote the potential of using NW lasers in applications including optical interconnects, sensing, displaying, and microscopy.…”

Section: Introductionmentioning

confidence: 99%

Self-frequency-conversion nanowire lasers

Zhang

et al. 2022

Light Sci Appl

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Semiconductor nanowires (NWs) could simultaneously provide gain medium and optical cavity for performing nanoscale lasers with easy integration, ultracompact footprint, and low energy consumption. Here, we report III–V semiconductor NW lasers can also be used for self-frequency conversion to extend their output wavelengths, as a result of their non-centrosymmetric crystal structure and strongly localized optical field in the NWs. From a GaAs/In0.16Ga0.84As core/shell NW lasing at 1016 nm, an extra visible laser output at 508 nm is obtained via the process of second-harmonic generation, as confirmed by the far-field polarization dependence measurements and numerical modeling. From another NW laser with a larger diameter which supports multiple fundamental lasing wavelengths, multiple self-frequency-conversion lasing modes are observed due to second-harmonic generation and sum-frequency generation. The demonstrated self-frequency conversion of NW lasers opens an avenue for extending the working wavelengths of nanoscale lasers, even to the deep ultraviolet and THz range.

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Room‐Temperature InGaAs Nanowire Array Band‐Edge Lasers on Patterned Silicon‐on‐Insulator Platforms

Cited by 24 publications

References 45 publications

Ultralow-threshold laser using super-bound states in the continuum

Ultralow-threshold laser using super-bound states in the continuum

Orientation‐Controlled Selective‐Area Epitaxy of III–V Nanowires on (001) Silicon for Silicon Photonics

Self-frequency-conversion nanowire lasers

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