Self-frequency-conversion nanowire lasers

Abstract

Semiconductor nanowires (NWs) could simultaneously provide gain medium and optical cavity for performing nanoscale lasers with easy integration, ultracompact footprint, and low energy consumption. Here, we report III–V semiconductor NW lasers can also be used for self-frequency conversion to extend their output wavelengths, as a result of their non-centrosymmetric crystal structure and strongly localized optical field in the NWs. From a GaAs/In0.16Ga0.84As core/shell NW lasing at 1016 nm, an extra visible laser output at 508 nm is obtained via the process of second-harmonic generation, as confirmed by the far-field polarization dependence measurements and numerical modeling. From another NW laser with a larger diameter which supports multiple fundamental lasing wavelengths, multiple self-frequency-conversion lasing modes are observed due to second-harmonic generation and sum-frequency generation. The demonstrated self-frequency conversion of NW lasers opens an avenue for extending the working wavelengths of nanoscale lasers, even to the deep ultraviolet and THz range.

Comparison of Harmonic Generation from Crystalline and Amorphous Gallium Phosphide Nanofilms

“…However, as mentioned before, the structure of the nonlinear susceptibility χ (2) is strongly dependent on the symmetries of the nonlinear material. When applying appropriate rotation matrices for [111] oriented GaP, the SHG intensity can expressed in the following form [ 31 ] (the detailed calculation can be found in Supporting Information): $$$$\begin{equation} I^{(2)}_{111} \propto (E_x^2E^2_y) + (E_x^2 - E_y^2)^2 + (E_x^2+E_y^2)^2 \end{equation}$$$$For a normal incident beam (traveling along the z ‐direction), this SHG intensity is constant relative to rotations of the excitation beam polarization. This is experimentally verified by placing a rotable λ/2 waveplate ( generator ) in the beampath before the sample, as shown in Supporting Information.…”

Review on III–V Semiconductor Nanowire Array Infrared Photodetectors

“…[1,3,[40][41][42] Therefore, they have been considered as promising candidates and investigated intensively for optoelectronic device applications such as photodetectors, [6,26,27] solar cells, [43][44][45] light-emitting diodes, [46][47][48] and lasers. [49][50][51] There has been considerable research on III-V nanowire solar cells. However, so far the highest efficiencies achieved in III-V nanowire solar cells based on different designs and fabrication methods are still too low (e.g., 15.3% and 7.43% from epitaxial grown axial [52] and radial p-n juntion, [53] respectively; and 17.8% and 17.1% for topdown etched axial p-n junction [54] and radial heterojunction, [55] respectively) to achieve an efficiency-to-cost ratio that is competitive and/or commercially viable compared with other current or emerging technologies.…”

Planar vs Non-Planar Orientation in AuAg-Catalyzed InP Nanowire Growth

“…In recent decades, extensive research has been devoted to free-standing semiconductor nanowires due to their significance in optoelectronics, − energy harvesting, and other fields of nanoscience and nanotechnology. − Extensive studies have been conducted on the synthesis of semiconductor nanowires using Au catalysts, including substrate nanopatterning methods that enable precise control over the growth of vertically aligned nanowires . However, the unintentional doping of Si nanowires with Au has impeded their broader application in Si-based devices. , Mid-gap electronic states induced by Au in Si affect device performance, particularly in complementary metal−oxide−semiconductor (CMOS) processes .…”