RF and DC Analysis of Stressed InGaAs MOSFETs

Abstract

Abstract-A complete reliability study of the DC and RF characteristics for InGaAs nMOSFETs with Al2O3/HfO2 dielectric is presented. The main stress variation at high frequencies is related to a threshold voltage shift, whereas no decrease is found in the maximum of the cut-off frequency and RF-transconductance. Constant gate stress leads to a charge build up within the gate oxide causing a threshold voltage shift. Furthermore, electron trapping at the drain side degrades the performance after hot carrier stress. The maximum DC-transconductance is reduced following constant gate bias stress, by an increase in charge trapping at border defects. These border defects at the channel/high-κ interface are filled by cold carrier trapping when the transistor is turned on, whereas they do not respond at high frequencies.

Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability

“…Unlike the favourable Si/SiO2 interface of contemporary CMOS logic devices, native oxides of InGaAs lack good interface properties [6], which has led to a considerable research interest in interface engineering of InGaAs nMOS devices [7][8][9][10][11][12][13]. In addition, achieving good gate-stack reliability of InGaAs-based MOSFETs has been extremely challenging with continuous technology scaling.…”

Hot carrier instability associated with hot carrier injection and charge injection in In0.7Ga0.3As MOSFETs with high-κ stacks

“…[2][3][4][5] Although there has been much progress regarding the electrical performance of III-V nMOSFETs, III-V nMOSFETs still suffer from short channel effects and various reliability concerns, including defect sites in high-κ stacks. [2][3][4][5][6][7][8][9][10][11] Among the various reliability-related mechanisms, channel hot carrier (CHC) reliability is dominant in comparison to constant-voltagestress (CVS) and bias-temperature-instability stress for aggressively scaled-down gate devices.…”