III–V nanowires for logics and beyond

Vertically Integrated Multiple Nanowire Field Effect Transistor

“…However, the continuous scaling down of the transistor gave rise to fatal short-channel effects (SCEs) , in addition to process limitations, which has increased the demand for a novel approach to meet new high-performance and scalability goals. In order to overcome the severe SCEs originating from the continuing device miniaturization efforts, considerable endeavors have been dedicated to the use of new materials, − innovative designs, , and novel operations. − Despite the fact that several new materials hold great promise, however, silicon still remains the most attractive material when considering its cost and the maturity of its fabrication process . In particular, various attempts based on the silicon process, which is a core technology for fabricating semiconductor devices, have permitted novel designs of transistors to suppress SCEs, resulting in the creation of three-dimensional (3-D) structures beyond the conventional two-dimensional (2-D) structures .…”