Abstract:The mechanism of the reaction in the reversal gas plasma etching of anti-reflective chromium photomasks was studied. Auger spectrometer and x-ray photoelectron spectrometer studies of the film revealed that WO3 is incorporated in the surface of the chromium oxide layer of the anti-reflective photomasks for the samples showing reversal etching. WO3 forms a kind of masking layer for the etching. Decomposed species of the photoresist film are found to be responsible for the etching of WOs, and carbon monoxide is … Show more
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