The design of plasma etchants

Flamm, Daniel; Donnelly, Vincent M.

doi:10.1007/bf00565992

Cited by 337 publications

(131 citation statements)

References 105 publications

Supporting

Mentioning

119

Contrasting

Unclassified

Order By: Relevance

“…In addition, it is seen that the SiO 2 curve has a smaller slope than the ma-N one. This suggests that CF x components from C 4 F 8 participate in the chemical etching reaction, an observation also reported in the literature [9]. Carbon has a strong bond to oxygen and is abundant in the passivation film at the surface, whereas fluorine has to diffuse through the film.…”

Section: Effect Of the Icp Parameters On The Etch Rates And Selectivisupporting

confidence: 72%

“…Silicon etching is caused by the neutral fluorine radicals released by SF 6 [9] and this process is isotropic in our regime. Accordingly, the data of Figure 1 shows that the highest silicon etch rates are obtained for pure SF 6 .…”

Section: Effect Of the Icp Parameters On The Etch Rates And Selectivimentioning

confidence: 95%

“…The etching mechanisms of the C 4 F 8 /SF 6 plasma chemistry have been investigated for deep etching [7][8][9][10][11][12]. This section gives an investigation of the etch rates as a function of the SF 6 ratio, platen power and chamber pressure in a low power regime suitable for the patterning of shallow nanostructures.…”

Section: Icp Etching Of Planar Substratesmentioning

confidence: 99%

“…Its effect is similar on the etch rates as the platen power one, namely that it affects mostly the oxide and the resist. Lowering the pressure is known to increase the flux and energy of the ions due to the longer mean free path and a modification of the sheath [9], but in different proportions than the platen power does. The silicon:oxide etch selectivity is also plotted in Figure 3.…”

Section: Effect Of the Icp Parameters On The Etch Rates And Selectivimentioning

confidence: 99%

See 3 more Smart Citations

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Harvey-Collard

Jaouad

Drouin

et al. 2013

Microelectronic Engineering

View full text Add to dashboard Cite

Inductively Coupled Plasma (ICP) etching of amorphous silicon (a-Si) nanostructures using a continuous C4F8/SF6 plasma over nanotopography in silicon dioxide (SiO2) is investigated. The coil power of the ICP system is used to tune the a-Si etch rate from 20 to 125 nm/min. The etch rates of a-Si, SiO2 and electroresist are measured depending on the SF6 ratio, platen power and chamber pressure and used to optimize the a-Si:SiO2 etch selectivity. The results on nanostructures show that the presence of an insulating etch-stop layer affects the passivation ratio required to achieve vertical sidewalls. A low pressure is also necessary in order to etch the silicon nanostructure embedded into the oxide nanotrenches to form a highly conformable a-Si nanowire. We argue that both of these behaviors could be explained by surface charging effects. Finally, etching of 20 nm a-Si nanowires that cross 15 nm trenches in oxide with vertical sidewalls and a 4.3:1 a-Si:SiO2 etch selectivity is demonstrated. This etching process can be used in applications where nanotopography is present such as single electron transistors or multigate transistors.

show abstract

Section: Effect Of the Icp Parameters On The Etch Rates And Selectivisupporting

confidence: 72%

Section: Effect Of the Icp Parameters On The Etch Rates And Selectivimentioning

confidence: 95%

Section: Icp Etching Of Planar Substratesmentioning

confidence: 99%

Section: Effect Of the Icp Parameters On The Etch Rates And Selectivimentioning

confidence: 99%

See 2 more Smart Citations

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Harvey-Collard

Jaouad

Drouin

et al. 2013

Microelectronic Engineering

View full text Add to dashboard Cite

show abstract

“…A figure of merit used in the field is the effective charge or Z eff of the plasma defined is: n.Z. 2 Z eff = I^" ' (2) e where n fi is the average plasma electron density and n^ is the average plasma ion density for species i with atomic charge Z^. With the widespread use of hydrogen discharge cleaning techniques 21 in the period of 1975-1980, including DC-and RF-driven glow discharges and pulse discharge cleaning techniques using the intrinsic tokamak magnetic systems, the attainment of low Z-pp plasmas became commonplace.…”

Section: Historical Development Of Gdcmentioning

confidence: 99%

Glow discharge techniques for conditioning high-vacuum systems

1989

Vacuum

View full text Add to dashboard Cite

A review is given of glow discharge techniques which are useful for conditioning vacuum vessels for high vacuum applications. Substantial development of glow discharge techniques has been done for the purpose of in-sttu conditioning of the large ultrahigh vacuum systems for particle accelerators and magnetic fusion devices. In these applications the glow discharge treatments remove impurities from vessel surfaces in order '"o minimize particle-induced desorption coefficients. Cleaning mechanisms involve a mixture of sputtering and ion-(or neutral) induced desorption effects depending on the gas mixture (Ar/Oj vs. H 2 ) and excitation method (DC, RF, and ECR). The author will review the methodology of glow discharge conditioning, diagnostic measurements provided by residual gas and surface composition analysis, and applications to vessel conditioning and materials processing. The ability of a glow discharge to enhance the chemical reactivity of the constitutive gases has given rise to numerous technical applications.Materials processing techniques involving glow-discharge-enhanced deposition 1 or etching 2 '^ processes have become essential for microcircuit fabrication.The subject of this review concerns a les3 well-known application of glow discharges: the cleaning and surface modification of vacuum vessels. Glow discharge cleaning (GDC) techniques have been developed primarily for the surface preparation of large vacuum vessels used with accelerator and magnetic fusion devices. However, GDC techniques are not limited to these historical applications and are useful for the surface preparation of any size vacuum vessel or constituent vacuum components used in ultrahigh vacuum (UHV) or vacuum systems requiring extreme cleanliness.In this review the historical development of GDC techniques is briefly described (Section 2). In Section 3, typical experimental arrangements are described. The major part of the review (Section M) is focus«c on the results of basic GDC studies and example applications from magnetic fusion devices and storage rings. These studies used quantitative residu..l gas and surface analysis measurements that illustrate the basic mechanisms and effectiveness of surface cleaning when GDC is applied to commonly used vacuum materials. Historical Development of GDCThe use of glow discharges for surface cleaning can be traced to studies This arrangement subjects the vessel wall to the ion bombardment which, as the later studies to be described have shown, removes surface and near-surface impurities from the vessel.The GDC technique was given its first wide exposure to the vacuum technology community with the development of Ar and Ar/0 2 GDC techniques^-12for the surface treatment of the first of several large proton storage rings'at CERN in the mid-1970's. Th-? techniques developed for the Intersecting Storage Ring (ISR) at CERN were ..ater adopted for use in other more recently constructed storage rings."" * Storage rings have several unique and stringent vacuum requirements. The operating pres...

show abstract

Plasma Processing of Polymers

Milella

2008

Encyclopedia of Polymer Science and Technology

View full text Add to dashboard Cite

Since the late 1960s when low‐pressure plasmas started to be widely investigated for the etching of silicon in microelectronics, an enormous interest has grown in the plasma processing of polymers. Plasmas allow to modify the surface of materials without altering their bulk. The uniqueness is related to the fact that they permit a continuous variation of the chemical composition of the treated surfaces and, in turn, of their structure and properties in a very broad range. This review provides a survey of the range of applications for plasmas to the processing of polymers, along with some fundamental aspects of nonequilibrium plasmas.

show abstract

The design of plasma etchants

Cited by 337 publications

References 105 publications

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Glow discharge techniques for conditioning high-vacuum systems

Plasma Processing of Polymers

Contact Info

Product

Resources

About