Plasma-assisted etching

Coburn, J. W.

doi:10.1007/bf00566856

Cited by 203 publications

(42 citation statements)

References 151 publications

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“…Si l'on s'intéresse maintenant aux premières étapes de la fluoruration, les expériences effectuées par UPS semblent indiquer que le mécanisme de fluoruration est séquentiel [26]. [5] (Fig.1 (2) impliquant deux groupes SiF2 proches voisins (Fig. 12).…”

unclassified

Mécanismes d'anisotropie dans la gravure du silicium en plasma SF6. Modèle de gravure

Petit¹,

Pelletier²

1986

Rev. Phys. Appl. (Paris)

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. Abstract -The mechanisms responsible for etching of silicon in low pressure SF6 plasma under low energy ion impact are studied using Microwave Multipolar Plasmas. Experimental results using both mass spectrometric and etch profile analysis show the evolution of anisotropy and etch rate as a function of pressure. In particular, a transition to perfect anisotropy is observed below a threshold pressure. To account for these experimental results, a new interpretation is proposed for the surface processes observed in plasma etching. To make the current models consistent, it is necessary to add three following assumptions : i) large lateral repulsive interactions between chemisorbed fluorine atoms in nearest neighbour positions ; ii) chemisorbed fluorine atom diffusion on the silicon surface ; iii) multilayer adsorption for the Si/F system. The analytical treatment of the model points out that the etch rate is limited by the partial pressure of atomic fluorine, and that the anisotropy is controlled by the ion current density.

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unclassified

Mécanismes d'anisotropie dans la gravure du silicium en plasma SF6. Modèle de gravure

Petit¹,

Pelletier²

1986

Rev. Phys. Appl. (Paris)

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“…There have been a number of reviews in recent years that address many of the fundamental issues involved with surface processes in reactive plasmas (Coburn andWinters, 1983, 1985;Winters et al, 1983;Hess, 1986). Among the observations and conclusions are: I .…”

Section: Surface Processesmentioning

confidence: 98%

“…1 AIChE Journal etching characteristics of the two materials (Burton et al, 1984). More detailed lists of etchant gases and materials that have been plasma etched are included in the reviews by Coburn (1982) and . Many films of organic polymers, inorganic elemental materials, and compound materials have been grown in plasmas.…”

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confidence: 99%

Plasma processing in microelectronics manufacturing

Graves

1989

AIChE Journal

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Plasma processing has emerged as an important technology for the deposition and etching of thin solid films in the manufacture of microelectronic devices. In fact, much of the progress achieved to date in device miniaturization would have been much more difficult without the unique characteristics of plasma processes. It is anticipated that future progress will continue to rely heavily on plasma technology. Although plasma chemical reactors are widely used, a lack of fundamental understanding has resulted in heavy reliance on empiricism in process design and control. The complexities inherent in any chemical reactor are compounded in plasma processing by the presence and active participation of the discharge in both gas phase and surface chemical processes. This has resulted in a technology that is sensitive to many design and operating parameters. A large parameter space gives process engineers flexibility in tailoring process conditions to meet objectives. However, without fundamental insight into the key physical and chemical processes, reactor design and control cannot be based on systematic, rational procedures. The purposes of this review are to introduce chemical engineers to plasma processing practice and phenomenology; to outline the progress made to date in fundamental studies of discharge physics and chemistry; to indicate areas in which chemical engineers must expand their traditional training to participate in plasma processing research; and finally to suggest how established chemical engineering methodology can be applied to plasma chemical reactors. David B. Graves Department of Chemical EngineeringUniversity of California Berkeley, CA 94720Introduction to Plasma Processing History, motivation, and future prospects Molecular gas plasmas are currently widely used in the microelectronics industry for the deposition and etching of thin solid films. Plasma processing is one of many techniques and processes used in the manufacture of integrated circuits (Doane et al., 1982), but the importance of plasma processing to present and future developments in microelectronics, coupled with the growing interest in this technology by chemical engineers, justifies a closer look at industrial practice and the underlying science. Simply stated, microelectronics manufacturing amounts to the growth, patterning, and doping of multiple layers of insulating, semiconducting, and conducting thin films (Hess, 1979). Consequently, deposition and selective etching of films is fundamental to many of the steps involved in this industry. It happens that chemically reacting, weakly ionized gas discharges are particularly powerful tools for depositing and removing thin films.Plasma etching is the more important process industrially, with VLSI (very large scale integration) relying upon the superior pattern transfer fidelity possible with plasma etching (a more or less equivalent term is reactive-ion etching). The utility of plasmas for etching hinges on their ability, under certain conditions, to remove material in the direction p...

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“…The material removal mechanisms are based on different chemical reactions between the fluorine radicals and the workpiece material, consisting mainly of silicon compounds like Si, SiO 2 , SiC and is well known and established for decades in reactor dry etching of semiconductor manufacturing industry [9][10][11][12][13][14][15][16]. In the case of fused silica the simplified main reaction is…”

Section: Plasma Jet Machining Processmentioning

confidence: 99%

New Process Simulation Procedure for High-Rate Plasma Jet Machining

Meister

Arnold

2010

Plasma Chem Plasma Process

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Surface figuring using chemically reactive plasma jet machining (PJM) is a promising non-conventional technology for deterministic ultra-precision machining of optical components. Based on chemical reactions between plasma generated radicals and the surface atoms this technology is capable to fabricate complex shaped free form surfaces. Since the material removal rate during PJM depends strongly on the surface temperature which itself is influenced by the jet heat flux to the surface, the arising nonlinear effects on the etch result have to be regarded. Conventionally applied dwell time calculation algorithms do not consider those effects leading to significant machining errors in some cases. In order to improve the machining procedure with respect to deterministic material removal yielding predictable results a process simulation model has been developed. This model considers spatio-temporal variations of surface temperature and temperature dependent material removal and is able to predict the final workpiece topography after machining.

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Plasma-assisted etching

Cited by 203 publications

References 151 publications

Mécanismes d'anisotropie dans la gravure du silicium en plasma SF6. Modèle de gravure

Mécanismes d'anisotropie dans la gravure du silicium en plasma SF6. Modèle de gravure

Plasma processing in microelectronics manufacturing

New Process Simulation Procedure for High-Rate Plasma Jet Machining

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