The etching characteristics of ion implanted chromium films in gas plasmas have been studied. It was found that in the case of Sb+ and As+ the etching rate of implanted chromium films decreased with increasing ion dose. It was also found that the etching rate depends on the surface impurity concentration, not on the total implanted dose of ions in the film. Using chromium film samples implanted with 20 keV ions at a dose of 1×1016 cm−2, reversely etched LSI photomask patterns have been obtained with good edge profiles. It is speculated that oxides of impurities are responsible for the reversal gas plasma etching.
Abstract— The source (or data) bus‐line to common (or backplane) electrode coupling effect in TFT‐LCDs has been investigated through experiment and simulation using a new model. The important feature of this simulated model is that the common electrode consists of a network of discrete resistors. The horizontal crosstalk is caused by this coupling effect, and the mechanism of the crosstalk has become clear by the simulation of 5‐in. TFT‐LCDs. By adopting this simulation, useful information for large‐area TFT‐LCD designs can be obtained. As an example, this simulation has been performed for 10‐ and 15‐in. TFT‐LCDs and the requirement for a common resistance has been illustrated.
The role of a photoresist film on reverse gas plasma etching of chromium photomask plates has been studied. The variation of etching profiles has been observed using SEM techniques. It is speculated that a WO3 layer on the chromium film forms a masking layer to the etching and that the WO3 layer can be removed by decomposition of the photoresist film in the plasma. A study of the relation between photoresist thickness and etching time has shown that there is an optimum photoresist thickness for each WO3 concentration in the chromium film.
The influence of hydrogenation on OFF current of TFTs with a bottom gate staggered structure has been investigated. The hydrogenation is done by exposing the surface of the a-Si:H channel layer to H2 plasma. The hydrogenation decreases the OFF current by more than one order of magnitude. The decrease in the OFF current is attributed to the increase in the density of states at the interface between the a-Si:H channel layer and the SiN passivating layer.
The crystallization behaviour of Fe 74 Dy 6 B 20 and Fe 70 Dy 10 B 20 amorphous alloys was carefully investigated by differential scanning calorimetry, Mössbauer spectrometry and x-ray diffraction up to 800 • C. Calorimetric studies were performed in limited temperature ranges that were progressively extended. For Fe 74 Dy 6 B 20 , after partial crystallization into the tetragonal Fe 3 B compound, the remaining amorphous part segregates into two amorphous 'phases', respectively enriched and impoverished in dysprosium. Tetragonal Fe 3 B further transforms into orthorhombic Fe 3 B. Metastable Dy 3 Fe 62 B 14 compound then forms from the Dy-impoverished amorphous fraction, and subsequent crystallization of the Dy 1+ε Fe 4 B 4 phase occurs in the Dy-enriched fraction. Finally, Dy 3 Fe 62 B 14 decomposes into bcc iron, Dy 1+ε Fe 4 B 4 and iron borides. The nature of the first crystallization product suggests the existence of local environments of t-Fe 3 B type for this Dy concentration. The crystallization process of Fe 70 Dy 10 B 20 strongly differs from that of Fe 74 Dy 6 B 20 . Segregation phenomena occur in the amorphous state prior to any crystallization. If the nature of the first crystallization product is assumed to be correlated with short-range order in the amorphous state, our results suggest that the local environments differ from those of Fe 74 Dy 6 B 20 , as they probably involve dysprosium atoms. This behaviour would agree with a previous Mössbauer study performed on the as-quenched amorphous alloys, providing evidence for a structural modification of the iron environments in the rare earth concentration range 8-9 at.%.
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